Strain gauges fabricated by C+ ion implantation in bulk polymers

被引：4

作者：

Di Girolamo, Giovanni ^{[1
,2
]}

机构：

[1] ENEA, UTMATB, Brindisi Res Ctr, I-72100 Brindisi, Italy

[2] CNR, Unit Lecce, Inst Microelect & Microsyst, I-72100 Lecce, Italy

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2012年 / 178卷

关键词：

Ion implantation; Polymer; Strain gauge; OPTICAL-PROPERTIES;

D O I：

10.1016/j.sna.2012.02.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion implantation can be successfully employed to produce thin conductive films in insulating polymers. To this aim, epoxy bulk samples were implanted at room temperature with C ions of 50-100 keV, ion fluences ranging from 1.5 x 10(17) to 3 x 10(17) ions/cm(2) and current density of 0.5-2 mu A/cm(2). The distribution and the depth profile of the implanted ions were calculated by SRIM and TRIDYN codes. The electrical resistance of the implanted samples was measured at room temperature: a significant conductivity was obtained when all the irradiation parameters were set to their highest value. The changes in electrical resistance were studied during compression and three-point bending tests, in order to evaluate the sensitivity of the implanted polymers and to study their capability to absorb distortions. A linear relationship between electrical resistance and surface load was noticed. The results showed that these innovative strain gauges exhibit very high sensitivity and reliability. They can be easily integrated in complex components and used for in-service monitoring of their structural stability and mechanical strain. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：136 / 140

页数：5

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