An InN/InGaN/GaN nanowire array guided wave photodiode on silicon

被引：14

作者：

Hazari, Arnab ^{[1
,2
]}

Baten, Md Zunaid ^{[1
,2
]}

Yan, Lifan ^{[1
,3
]}

Millunchick, Joanna M. ^{[1
,3
]}

Bhattacharya, Pallab ^{[1
,2
]}

机构：

[1] Univ Michigan, Ctr Photon & Multiscale Nanomat, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[3] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 19期

基金：

美国国家科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; GAN NANOWIRES; CATALYST-FREE; HETEROSTRUCTURES; UV;

D O I：

10.1063/1.4967439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The III-nitride nanowire heterostructure arrays with multiple InN disk light absorbing regions have been grown by plasma-assisted molecular beam epitaxy on (001) Si substrates, and guided wave photodiodes have been fabricated and characterized. The spectral photocurrent of the devices has been measured under reverse bias, and the data exhibit distinct shoulders in the range of 0.69-3.2 eV (0.39-1.8 mu m). The estimated responsivity at a wavelength of 1.3 mu m is 0.2 A/W. The nanowire photodiode response was also measured with an excitation at one facet provided by an edge-emitting laser fabricated with the same nanowire array and emitting at 1.3 mu m. Published by AIP Publishing.

引用

页数：4

共 26 条

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