SiC Device Junction Temperature Online Monitoring

被引：0
作者：
Wang, Ruxi [1 ]
Sabate, Juan [1 ]
Mainali, Krishna [1 ]
Sadilek, Tomas [1 ]
Losee, Peter [1 ]
Yash, Singh [1 ]
机构：
[1] Gen Elect Global Res, New York, NY 12308 USA
来源：
2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2018年
关键词：
Silicon Carbide; Gate Driver; Temperature Sensor; POWER; RELIABILITY;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.
引用
收藏
页码：387 / 392
页数：6
相关论文
共 50 条
  • [31] Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules
    Mocevic, Slavko
    Mitrovic, Vladimir
    Wang, Jun
    Burgos, Rolando
    Boroyevich, Dushan
    Jaksic, Marko
    Teimor, Mehrdad
    [J]. 2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 3761 - 3768
  • [32] Utilizing Electroluminescence of SiC MOSFETs for Unified Junction-Temperature and Current Sensing
    Kalker, Sven
    van der Broeck, Christoph H.
    De Doncker, Rik W.
    [J]. 2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020), 2020, : 1098 - 1105
  • [33] Challenges of Junction Temperature Sensing in SiC Power MOSFETs
    Gonzalez, J. Ortiz
    Alatise, O.
    [J]. 2019 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE 2019 - ECCE ASIA), 2019, : 891 - 898
  • [34] High-Accuracy Online Junction Temperature Measurement of Medium-Voltage SiC MOSFETs Based on Passive Turn-On Delay Time Integrator
    Dou, Jialong
    Wang, Zhiqiang
    Xin, Guoqing
    Shi, Xiaojie
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (04) : 4775 - 4779
  • [35] Driver Integrated Online Rds-on Monitoring Method for SiC Power Converters
    Chen, Zibo
    Chen, Chen
    Huang, Alex Q.
    [J]. 2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2022,
  • [36] Precise and Fast Real-Time Measurement of Junction Temperature in SiC Power MOSFETs
    Hu, Bo
    Wang, Jun
    Ke, Zipeng
    Zhang, Chao
    He, Minmin
    Yu, Hengyu
    Ding, Yuzhou
    [J]. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2024, 60 (06) : 9134 - 9144
  • [37] Optimized junction temperature fluctuation suppression technique for SiC MOSFETs in a wireless charging system
    Wang, Ruoyin
    Huang, Xueliang
    Li, Jiacheng
    [J]. JOURNAL OF POWER ELECTRONICS, 2022, 22 (05) : 859 - 869
  • [38] Switching Transient-Based Junction Temperature Estimation of SiC MOSFETs With Aging Compensation
    Farhadi, Masoud
    Sajadi, Rahman
    Vankayalapati, Bhanu Teja
    Akin, Bilal
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (10) : 12424 - 12434
  • [39] Monitoring IGBT's Health Condition via Junction Temperature Variations
    Tian, Bo
    Qiao, Wei
    Wang, Ze
    Gachovska, Tanya
    Hudgins, Jerry L.
    [J]. 2014 TWENTY-NINTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2014, : 2550 - 2555
  • [40] Accounting for Acquisition Circuit Temperature in Accurate Online Junction Temperature Estimation
    Baron, Kevin Munoz
    Sharma, Kanuj
    Nitzsche, Maximilian
    Kallfass, Ingmar
    [J]. 2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE), 2021,
12345