SiC Device Junction Temperature Online Monitoring

被引：0

作者：

Wang, Ruxi ^{[1
]}

Sabate, Juan ^{[1
]}

Mainali, Krishna ^{[1
]}

Sadilek, Tomas ^{[1
]}

Losee, Peter ^{[1
]}

Yash, Singh ^{[1
]}

机构：

[1] Gen Elect Global Res, New York, NY 12308 USA

来源：

2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2018年

关键词：

Silicon Carbide; Gate Driver; Temperature Sensor; POWER; RELIABILITY;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.

引用

页码：387 / 392

页数：6

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