SiC Device Junction Temperature Online Monitoring

被引：0
|
作者：
Wang, Ruxi [1 ]
Sabate, Juan [1 ]
Mainali, Krishna [1 ]
Sadilek, Tomas [1 ]
Losee, Peter [1 ]
Yash, Singh [1 ]
机构：
[1] Gen Elect Global Res, New York, NY 12308 USA
来源：
2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2018年
关键词：
Silicon Carbide; Gate Driver; Temperature Sensor; POWER; RELIABILITY;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents. Through proper signal processing, this gate loop current peak value can be captured and utilized as the junction temperature indicator. The concept and feasibility was verified through both simulation and experimental results.
引用
收藏
页码：387 / 392
页数：6
相关论文
共 50 条
  • [1] An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters
    Sun, Peng
    Guo, Yahui
    Wu, Tao
    Zhao, Zhibin
    Lai, Pengyu
    Chen, Zhong
    Qi, Lei
    Cui, Xiang
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2022, 10 (05) : 5007 - 5018
  • [2] An Online Correction Method for Inaccuracy of Junction Temperature Monitoring Caused by Degradation of SiC MOSFETs
    Zhang, Ziyang
    Liang, Lin
    Fei, Haoyang
    Han, Lubin
    Shang, Hai
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2024, 12 (06) : 5511 - 5522
  • [3] Online Junction Temperature Monitoring for SiC MOSFETs Using Turn-On Delay Time
    Qiao, Liang
    Wang, Fred
    Dyer, Jacob
    Zhang, Zheyu
    2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020), 2020, : 1526 - 1531
  • [4] An Online Junction Temperature Monitoring Method for SiC MOSFETs Based on a Novel Gate Conduction Model
    Zhang, Qinghao
    Zhang, Pinjia
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (10) : 11087 - 11096
  • [5] Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter
    Cao, Han
    Ning, Puqi
    Huang, Yunhao
    Wen, Xuhui
    CSEE JOURNAL OF POWER AND ENERGY SYSTEMS, 2024, 10 (04): : 1799 - 1807
  • [6] Online monitoring of IGBT junction temperature based on Vce measurement
    Cao, Han
    Ning, Puqi
    Chai, Xiaoguang
    Zheng, Dan
    Kang, Yuhui
    Wen, Xuhui
    JOURNAL OF POWER ELECTRONICS, 2021, 21 (02) : 451 - 463
  • [7] Online Junction Temperature Monitoring Method for SiC MOSFETs Based on Turn-Off Miller Plateau Voltage
    Quan, Yuhua
    Pan, Ruiyan
    Liu, Tiantian
    Zhou, Xuetong
    Feng, Junhong
    Tian, Yufei
    Zheng, Li
    Cheng, Xinhong
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (12) : 15800 - 15810
  • [8] Online Junction Temperature Estimation Method for SiC MOSFETs Based on the DC Bus Voltage Undershoot
    Yang, Yanyong
    Wu, Yang
    Ding, Xiaofeng
    Zhang, Pinjia
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2023, 38 (04) : 5422 - 5431
  • [9] A High-Sensitivity Online Junction Temperature Monitoring Method for SiC mosfets Based on the Turn-on DrainSource Current Overshoot
    Zhang, Qinghao
    Lu, Geye
    Zhang, Pinjia
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (12) : 15505 - 15516
  • [10] Temperature-Independent Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Junction Capacitances
    Farhadi, Masoud
    Yang, Fei
    Pu, Shi
    Vankayalapati, Bhanu Teja
    Akin, Bilal
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (07) : 8308 - 8324
12345