Optical and microstructural studies of atomically flat ultrathin In-rich InGaN/GaN multiple quantum wells

被引：29

作者：

Kwon, Soon-Yong ^{[1
]}

Kim, Hee Jin ^{[1
]}

Yoon, Euijoon ^{[1
]}

Jang, Yudong ^{[2
]}

Yee, Ki-Ju ^{[2
]}

Lee, Donghan ^{[2
]}

Park, Seoung-Hwan ^{[3
]}

Park, Do-Young ^{[4
]}

Cheong, Hyeonsik ^{[4
]}

Rol, Fabian ^{[5
]}

Dang, Le Si ^{[5
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[3] Catholic Univ Daegu, Dept Elect Engn, Kyeongsan 712702, South Korea

[4] Sogang Univ, Dept Phys, Seoul 121742, South Korea

[5] Univ Grenoble 1, CNRS,UMR 5588, CEA,Lab Spectrometrie Phys, UJF,Res Grp, F-38402 St Martin Dheres, France

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 06期

关键词：

D O I：

10.1063/1.2874494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical and microstructural properties of atomically flat ultrathin In-rich (UTIR) InGaN/GaN multiple quantum well were investigated by means of photoluminescence (PL), time-resolved PL (TRPL), and cathodoluminescence (CL) experiments. The sample exhibits efficient trapping of the photoexcited carriers into quantum wells (QWs) and the effect of internal electric field in the QWs was found negligible by excitation power-dependent PL and TRPL. These phenomena were attributed to the nature of UTIR InGaN QWs, indicating the potential of this system for application in optoelectronic devices. Variation of TRPL lifetime across the PL band and spatially resolved monochromatic CL mapping images strongly suggest that there is micrometer-scale inhomogeneity in effective band gap in UTIR InGaN/GaN QWs, which is originated from two types of localized areas. (C) 2008 American Institute of Physics.

引用

页数：4

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