New spin-on oxycarbosilane low-k dielectric materials with exceptional mechanical properties

被引：12

作者：

Geraud, D ^{[1
]}

Magbitang, T ^{[1
]}

Volksen, W ^{[1
]}

Simonyi, EE ^{[1
]}

Miller, RD ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2005年

关键词：

D O I：

10.1109/IITC.2005.1499991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bridged oxycarbosilane monomers are excellent precursors for the formation of spin on porous low-k materials using sacrificial pore generators. The measured Young's modulus numbers for the as-synthesized thin films without any post porosity toughening are the highest by far of any that we have observed for porous films generated using the sacrificial porogen route. For a given dielectric constant, the Young's modulus of these oxycarbosilane films are 4-5 times higher than available organosilicates and at least 2 times higher than UV treated organosilicate materials.

引用

页码：226 / 228

页数：3

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