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Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate
被引:30
|作者:
Serre, S.
[1
,2
]
Semikh, S.
[3
]
Uznanski, S.
[4
]
Autran, J. L.
[1
,2
]
Munteanu, D.
[1
,2
]
Gasiot, G.
[4
]
Roche, P.
[4
]
机构:
[1] Aix Marseille Univ, F-13384 Marseille 13, France
[2] CNRS, UMR CNRS 6242, Inst Mat Microelect & Nanosci Provence IM2NP, F-13384 Marseille 13, France
[3] JINR, Dzhelepov Lab Nucl Problems, Dubna 141980, Moscow Region, Russia
[4] STMicroelectronics, F-38926 Crolles, France
关键词:
Cosmic-ray induced neutrons;
Geant4;
multiple cell upset;
neutron beam testing;
single-event upset;
soft-error rate;
SRAM;
terrestrial neutron spectrum;
SRAM;
D O I:
10.1109/TNS.2012.2189018
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This work examines nuclear events resulting from the interaction of atmospheric neutrons at ground level and different atmospheric-like sources with a silicon layer. Using extensive Geant4 simulations and in-depth data analysis, this study provides a detailed comparison between several facilities and natural environment in terms of nuclear processes, secondary ion production and fragment energy distribution. The different computed databases have been used in a second part of this work to estimate the Soft-Error Rate (SER) of a widely characterized 65 nm SRAM test circuit with the Tool suIte for rAdiation Reliability Assessment (TIARA Monte-Carlo simulation code). A detailed analysis is conducted to clarify the mechanisms leading to single and multiple cell upsets and to estimate the SER of a broad spectrum source from values obtained with monoenergetic simulations.
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页码:714 / 722
页数:9
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