Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

被引:30
作者
Serre, S. [1 ,2 ]
Semikh, S. [3 ]
Uznanski, S. [4 ]
Autran, J. L. [1 ,2 ]
Munteanu, D. [1 ,2 ]
Gasiot, G. [4 ]
Roche, P. [4 ]
机构
[1] Aix Marseille Univ, F-13384 Marseille 13, France
[2] CNRS, UMR CNRS 6242, Inst Mat Microelect & Nanosci Provence IM2NP, F-13384 Marseille 13, France
[3] JINR, Dzhelepov Lab Nucl Problems, Dubna 141980, Moscow Region, Russia
[4] STMicroelectronics, F-38926 Crolles, France
关键词
Cosmic-ray induced neutrons; Geant4; multiple cell upset; neutron beam testing; single-event upset; soft-error rate; SRAM; terrestrial neutron spectrum; SRAM;
D O I
10.1109/TNS.2012.2189018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work examines nuclear events resulting from the interaction of atmospheric neutrons at ground level and different atmospheric-like sources with a silicon layer. Using extensive Geant4 simulations and in-depth data analysis, this study provides a detailed comparison between several facilities and natural environment in terms of nuclear processes, secondary ion production and fragment energy distribution. The different computed databases have been used in a second part of this work to estimate the Soft-Error Rate (SER) of a widely characterized 65 nm SRAM test circuit with the Tool suIte for rAdiation Reliability Assessment (TIARA Monte-Carlo simulation code). A detailed analysis is conducted to clarify the mechanisms leading to single and multiple cell upsets and to estimate the SER of a broad spectrum source from values obtained with monoenergetic simulations.
引用
收藏
页码:714 / 722
页数:9
相关论文
共 13 条
[1]   The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets [J].
Andrew, Michael ;
Sierawski, Brian D. ;
Warren, Kevin M. ;
Mendenhall, Marcus H. ;
Dodds, Nathaniel A. ;
Weller, Robert A. ;
Reed, Robert A. ;
Dodd, Paul E. ;
Shaneyfelt, Marty R. ;
Schwank, James R. ;
Wender, Stephen A. ;
Baumann, Robert C. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) :2591-2598
[2]  
[Anonymous], 1989, JEDEC STAND MEAS REP
[3]  
[Anonymous], 2004, SER-History, Trends and Challenges:A Guide for Designing With Memory ICs
[4]   Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM [J].
Autran, J. L. ;
Roche, P. ;
Sauze, S. ;
Gasiot, G. ;
Munteanu, D. ;
Loaiza, P. ;
Zampaolo, M. ;
Borel, J. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (04) :2258-2266
[5]   Improved capabilities for proton and neutron irradiations at TRIUMF [J].
Blackmore, EW ;
Dodd, PE ;
Shaneyfelt, MR .
2003 IEEE RADIATION EFFECTS DATA WORKSHOP RECORD, 2003, :149-155
[6]   Innovative simulations of heavy ion cross sections in 130 nm CMOS SRAM [J].
Correas, Vincent ;
Saigne, F. ;
Sagnes, B. ;
Boch, J. ;
Gasiot, G. ;
Giot, D. ;
Roche, P. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :2413-2418
[7]   THE LOS-ALAMOS-NATIONAL-LABORATORY SPALLATION NEUTRON SOURCES [J].
LISOWSKI, PW ;
BOWMAN, CD ;
RUSSELL, GJ ;
WENDER, SA .
NUCLEAR SCIENCE AND ENGINEERING, 1990, 106 (02) :208-218
[8]  
Normand E., 2010, P IEEE RAD EFF DAT W, P50
[9]   FIDELITY OF ENERGY SPECTRA AT NEUTRON FACILITIES FOR SINGLE-EVENT EFFECTS TESTING [J].
Platt, S. P. ;
Prokofiev, A. V. ;
Xiao, Cai Xiao .
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, :411-416
[10]   ANITA - a New Neutron Facility for Accelerated SEE Testing at The Svedberg Laboratory [J].
Prokofiev, Alexander V. ;
Blomgren, Jan ;
Platt, Simon P. ;
Nolte, Ralf ;
Roettger, Stefan ;
Smimov, Andrey N. .
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2, 2009, :929-+