Low cerium doping investigation on structural and photoluminescence properties of sol-gel ZnO thin films

被引:42
作者
Chelouche, A. [1 ]
Touam, T. [2 ,3 ]
Tazerout, M. [1 ]
Boudjouan, E. [1 ]
Djouadi, D. [1 ]
Doghmane, A. [2 ]
机构
[1] Univ Bejaia, Fac Technol, Lab Genie Environm, Bejaia 06000, Algeria
[2] Univ Badji Mokhtar Annaba, Lab Semicond, BP 12, Annaba 23000, Algeria
[3] Univ Ferhat Abbas Setif 1, UROP CDTA, Setif 19000, Algeria
关键词
Cerium; Zinc oxide; Thin films; Sol-gel; Photoluminescence; OPTICAL-PROPERTIES; SENSING PROPERTIES; STABILIZER RATIO; CE; TEMPERATURE; ELECTRODEPOSITION; EMISSION; NANORODS; LAYERS;
D O I
10.1016/j.jlumin.2016.09.061
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Undoped and cerium (Ce)-doped zinc oxide (ZnO) thin films with various doping concentrations of cerium (0.1-0.9 at.%) were prepared on glass substrates by the sol-gel dip-coating process. The effects of Ce doping on the structural, morphological and optical properties were studied by X-ray diffraction, energy-dispersive X-rays, atomic force microscopy, UV-visible spectrophotometry and photoluminescence spectroscopy. The diffraction patterns showed that all the samples are characterized by a hexagonal wurtzite crystalline ZnO structure with (0002) preferred orientation. The crystal quality and crystallite size were found to decrease with the Ce doping level. From the atomic force microscopy images analysis it was revealed that both of the grain size and the surface roughness decrease with the increasing of the Ce concentrations. According to UV-visible measurements all the films are highly transparent with average visible transmittance values ranging from 79% to 82%, and the optical band gap is sensitive to the dopant concentration. Room temperature photoluminescence spectra put into evidence that UV and visible emissions decrease significantly as the Ce concentration increases from 0.1 to 0.9 at.%. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:448 / 454
页数:7
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