Enhanced Carrier Generation in Nb-Doped SnO2 Thin Films Grown on Strain-Inducing Substrates

被引：19

作者：

Nakao, Shoichiro ^{[1
,2
]}

Yamada, Naoomi ^{[3
]}

Hirose, Yasushi ^{[1
,2
,4
]}

Hasegawa, Tetsuya ^{[1
,2
,4
]}

机构：

[1] KAST, Kawasaki, Kanagawa 2130012, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawasaki, Kanagawa 2130012, Japan

[3] Chubu Univ, Dept Appl Chem, Kasugai, Aichi 4878501, Japan

[4] Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 06期

关键词：

PULSED-LASER DEPOSITION; SB;

D O I：

10.1143/APEX.5.061201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effect of lattice strain from the substrate on carrier generation in Nb-doped SnO2 (NTO) transparent conductive oxide (TCO) thin films. The carrier activation efficiency of Nb was strongly affected by in-plane tensile strain, and the NTO films grown on c-Al2O3 and anatase TiO2 seed layers had carrier density (n(e)) as high as 3 x 10(20) cm(-3). In contrast, strain-free NTO films grown on glass exhibited much smaller n(e) due to the formation of deep impurity levels. These results imply that NTO has potential as a practical TCO in the presence of substrate-film epitaxial interaction. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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