Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates

被引:37
作者
Chen, Jingren [1 ,2 ]
Wang, Gaokai [1 ,2 ]
Meng, Junhua [3 ]
Cheng, Yong [1 ,2 ]
Yin, Zhigang [1 ,2 ]
Tian, Yan [1 ,2 ]
Huang, Jidong [1 ,2 ]
Zhang, Siyu [1 ,2 ]
Wu, Jinliang [1 ]
Zhang, Xingwang [1 ,2 ,4 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Beijing Univ Technol, Fac Sci, Beijing 100124, Peoples R China
[4] Wuyi Univ, Joint Lab Digital Opt Chip, Jiangmen 529020, Peoples R China
基金
中国国家自然科学基金;
关键词
hexagonal boron nitride (h-BN); substrate temperature; crystalline quality; doping; photodetectors; EPITAXIAL-GROWTH; MONOLAYER; FOILS;
D O I
10.1021/acsami.1c22626
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Wide-band-gap layered semiconductor hexagonal boron nitride (h-BN) is attracting intense interest due to its unique optoelectronic properties and versatile applications in deep ultraviolet optoelectronic and two-dimensional electronic devices. However, it is still a great challenge to directly grow high-quality hBN on dielectric substrates, and an extremely high substrate temperature or annealing is usually required. In this work, high-quality few-layer h-BN is directly grown on sapphire substrates via ion beam sputtering deposition at a relatively low temperature of 700 degrees C by introducing NH3 into the growth chamber. Such low growth temperature is attributed to the presence of abundant active N species, originating from the decomposition of NH3 under ion beam irradiation. To further tailor the properties of h-BN, carbon was introduced into the h-BN layer by simultaneously introducing CH4 and NH3 during the growth process, indicating the wide applicability of this approach. Moreover, a deep ultraviolet (DUV) photodetector is also fabricated from a C-doped h-BN layer and exhibits superior performance compared with an intrinsic h-BN device.
引用
收藏
页码:7004 / 7011
页数:8
相关论文
共 43 条
[1]   Chemical Interaction-Guided, Metal-Free Growth of Large-Area Hexagonal Boron Nitride on Silicon-Based Substrates [J].
Behura, Sanjay ;
Phong Nguyen ;
Debbarma, Rousan ;
Che, Songwei ;
Seacrist, Michael R. ;
Berry, Vikas .
ACS NANO, 2017, 11 (05) :4985-4994
[2]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[3]   Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111) [J].
Chen, Tse-An ;
Chuu, Chih-Piao ;
Tseng, Chien-Chih ;
Wen, Chao-Kai ;
Wong, H. -S. Philip ;
Pan, Shuangyuan ;
Li, Rongtan ;
Chao, Tzu-Ang ;
Chueh, Wei-Chen ;
Zhang, Yanfeng ;
Fu, Qiang ;
Yakobson, Boris I. ;
Chang, Wen-Hao ;
Li, Lain-Jong .
NATURE, 2020, 579 (7798) :219-+
[4]   Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD [J].
Chen, Yuanpeng ;
Liang, Hongwei ;
Xia, Xiaochuan ;
Zhang, Heqiu ;
Shi, Jianjun ;
Abbas, Qasim ;
Du, Guotong .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (19) :14341-14347
[5]   Flow modulation epitaxy of hexagonal boron nitride [J].
Chugh, D. ;
Wong-Leung, J. ;
Li, L. ;
Lysevych, M. ;
Tan, H. H. ;
Jagadish, C. .
2D MATERIALS, 2018, 5 (04)
[6]   Two stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy - a homoepitaxial approach [J].
Dabrowska, Aleksandra Krystyna ;
Tokarczyk, Mateusz ;
Kowalski, Grzegorz ;
Binder, Johannes ;
Bozek, Rafal ;
Borysiuk, Jolanta ;
Stepniewski, Roman ;
Wysmolek, Andrzej .
2D MATERIALS, 2021, 8 (01)
[7]   Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors [J].
Gao, Menglei ;
Meng, Junhua ;
Chen, Yanan ;
Ye, Siyuan ;
Wang, Ye ;
Ding, Congyu ;
Li, Yubo ;
Yin, Zhigang ;
Zeng, Xiangbo ;
You, Jingbi ;
Jin, Peng ;
Zhang, Xingwang .
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (47) :14999-15006
[8]   Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition [J].
Gigliotti, James ;
Li, Xin ;
Sundaram, Suresh ;
Deniz, Dogukan ;
Prudkovskiy, Vladimir ;
Turmaud, Jean-Philippe ;
Hu, Yiran ;
Hu, Yue ;
Fossard, Frederic ;
Merot, Jean-Sebastien ;
Loiseau, Annick ;
Patriarche, Gilles ;
Yoon, Bokwon ;
Landman, Uzi ;
Ougazzaden, Abdallah ;
Berger, Claire ;
de Heer, Walt A. .
ACS NANO, 2020, 14 (10) :12962-12971
[9]   Spectroscopic Size and Thickness Metrics for Liquid-Exfoliated h-BN [J].
Griffin, Aideen ;
Harvey, Andrew ;
Cunningham, Brian ;
Scullion, Declan ;
Tian, Tian ;
Shih, Chih-Jen ;
Greening, Myrta ;
Donegan, John F. ;
Santos, Elton J. G. ;
Backes, Claudia ;
Coleman, Jonathan N. .
CHEMISTRY OF MATERIALS, 2018, 30 (06) :1998-2005
[10]   Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire [J].
Jang, A-Rang ;
Hong, Seokmo ;
Hyun, Chohee ;
Yoon, Seong In ;
Kim, Gwangwoo ;
Jeong, Hu Young ;
Shin, Tae Joo ;
Park, Sung O. ;
Wong, Kester ;
Kwak, Sang Kyu ;
Park, Noejung ;
Yu, Kwangnam ;
Choi, Eunjip ;
Mishchenko, Artem ;
Withers, Freddie ;
Novoselov, Kostya S. ;
Lim, Hyunseob ;
Shin, Hyeon Suk .
NANO LETTERS, 2016, 16 (05) :3360-3366