Synthesis of aluminum nitride nanostructures via chemical vapor deposition method with nickel as catalyst

被引：5

作者：

Jiang, Renjie ^{[1
,2
]}

Meng, Xianquan ^{[1
,2
,3
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China

[2] Wuhan Univ, Sch Phys & Technol, Ctr Nanosci & Nanotechnol, Wuhan 430072, Hubei, Peoples R China

[3] Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Hubei, Peoples R China

来源：

REVISTA MEXICANA DE FISICA | 2018年 / 64卷 / 01期

基金：

中国国家自然科学基金;

关键词：

AlN; CVD; nanowire; catalyst; THIN-FILMS; NANOWIRES; GROWTH; ALN; PHOTODETECTOR; CONDUCTIVITY;

D O I：

10.31349/RevMexFis.64.67

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The authors successfully synthesized aluminum nitride (AlN) nanowires by chemical vapor deposition (CVD) using aluminum (Al) powder and ammonia (NH3) as starting materials with nickel (Ni) as catalyst. The morphologies, the composition and structure information of samples were characterized by scanning electron microscopies (SEM), transmission electron microscopies (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Nanostructures with manifold morphologies were obtained by tuning the growth temperature and the growth time. The AlN nanowires are proved to have the wurtzite structure as demonstrated by XRD. The growth mechanism of AlN nanowires assisted with Ni catalyst is proposed to explain the nucleation and growth of nanowires.

引用

页码：67 / 71

页数：5

共 20 条

[1] Fabrication and comparative optical characterization of n-ZnO nanostructures (nanowalls, nanorods, nanoflowers and nanotubes)/p-GaN white-light-emitting diodes [J].

Alvi, N. H. ;

Ali, S. M. Usman ;

Hussain, S. ;

Nur, O. ;

Willander, M. .

SCRIPTA MATERIALIA, 2011, 64 (08) :697-700

[2] High-Performance Fully Nanostructured Photodetector with Single-Crystalline CdS Nanotubes as Active Layer and Very Long Ag Nanowires as Transparent Electrodes [J].

An, Qinwei ;

Meng, Xianquan ;

Sun, Pan .

ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (41) :22941-22952

[3] OBSERVATION OF A NEGATIVE ELECTRON-AFFINITY FOR HETEROEPITAXIAL ALN ON ALPHA(6H)-SIC(0001) [J].

BENJAMIN, MC ;

WANG, C ;

DAVIS, RF ;

NEMANICH, RJ .

APPLIED PHYSICS LETTERS, 1994, 64 (24) :3288-3290

[4]

Ki-Sik Im, 2015, APPL PHYS EXPRESS, V8

[5] MICROSTRUCTURE AND THERMAL-CONDUCTIVITY OF EPITAXIAL ALN THIN-FILMS [J].

KUO, PK ;

AUNER, GW ;

WU, ZL .

THIN SOLID FILMS, 1994, 253 (1-2) :223-227

[6] Emerging methanol-tolerant AlN nanowire oxygen reduction electrocatalyst for alkaline direct methanol fuel cell [J].

Lei, M. ;

Wang, J. ;

Li, J. R. ;

Wang, Y. G. ;

Tang, H. L. ;

Wang, W. J. .

SCIENTIFIC REPORTS, 2014, 4

[7] Thermal annealing effects on the optoelectronic characteristics of fully nanowire-based UV detector [J].

Li, Pengan ;

Meng, Xianquan .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (07) :7693-7698

[8] Sensitivity Enhancement of Ultraviolet Photodetectors With the Structure of p-NiO/Insulator-SiO2/n-ZnO Nanowires [J].

Li, Yu-Ren ;

Wan, Chung-Yun ;

Chang, Chia-Tsung ;

Huang, Yu-Chih ;

Tsai, Wan-Lin ;

Lee, I-Che ;

Cheng, Huang-Chung .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (08) :850-852

[9] A single polymer nanowire photodetector [J].

O'Brien, Garret A. ;

Quinn, Aidan J. ;

Tanner, David A. ;

Redmond, Gareth .

ADVANCED MATERIALS, 2006, 18 (18) :2379-+

[10] Growth, structural and optical properties of AlGaN nanowires in the whole composition range [J].

Pierret, A. ;

Bougerol, C. ;

Murcia-Mascaros, S. ;

Cros, A. ;

Renevier, H. ;

Gayral, B. ;

Daudin, B. .

NANOTECHNOLOGY, 2013, 24 (11)

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