Synthesis of aluminum nitride nanostructures via chemical vapor deposition method with nickel as catalyst

被引:5
作者
Jiang, Renjie [1 ,2 ]
Meng, Xianquan [1 ,2 ,3 ]
机构
[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
[2] Wuhan Univ, Sch Phys & Technol, Ctr Nanosci & Nanotechnol, Wuhan 430072, Hubei, Peoples R China
[3] Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
AlN; CVD; nanowire; catalyst; THIN-FILMS; NANOWIRES; GROWTH; ALN; PHOTODETECTOR; CONDUCTIVITY;
D O I
10.31349/RevMexFis.64.67
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The authors successfully synthesized aluminum nitride (AlN) nanowires by chemical vapor deposition (CVD) using aluminum (Al) powder and ammonia (NH3) as starting materials with nickel (Ni) as catalyst. The morphologies, the composition and structure information of samples were characterized by scanning electron microscopies (SEM), transmission electron microscopies (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Nanostructures with manifold morphologies were obtained by tuning the growth temperature and the growth time. The AlN nanowires are proved to have the wurtzite structure as demonstrated by XRD. The growth mechanism of AlN nanowires assisted with Ni catalyst is proposed to explain the nucleation and growth of nanowires.
引用
收藏
页码:67 / 71
页数:5
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