On the growth of InAs nanowires by molecular beam epitaxy

被引：10

作者：

Martelli, Faustino ^{[1
]}

Rubini, Silvia ^{[2
]}

Jabeen, Fauzia ^{[2
,3
]}

Felisari, Laura ^{[2
]}

Grillo, Vincenzo ^{[4
,5
]}

机构：

[1] CNR, Ist Microelettron & Microsistemi, I-00133 Rome, Italy

[2] CNR, Ist Officina Mat, Lab TASC, I-34149 Trieste, Italy

[3] Sincrotrone Trieste SCPA, Elettra Lab, I-34149 Trieste, Italy

[4] CNR, Ist Nanosci, I-41125 Modena, Italy

[5] CNR IMEM, I-43010 Parma, Italy

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Crystal structure; Molecular beam epitaxy; Nanomaterials; Semiconducting indium compounds; LIQUID-SOLID MECHANISM; GAAS; MANGANESE;

D O I：

10.1016/j.jcrysgro.2010.10.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of InAs nanowires by molecular beam epitaxy only takes place in a narrow temperature range, independent of the method used to induce the growth: with (Au or Mn) or without metal catalysts. Our findings suggest that the physical chemistry of the intermetallic compound formed during the catalyzed growth of the NWs is not relevant for the induction of the growth. Moreover, the lattice structure of the wires always shows wurtzite sections. Our results indicate the need of a unified model for the metal-catalyzed and self-catalyzed growth of nanowires. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：297 / 300

页数：4

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