Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy

被引:6
作者
Ishikawa, Shinya [1 ]
Enobio, Eli C. I. [1 ]
Sato, Hideo [2 ,3 ]
Fukami, Shunsuke [2 ,3 ]
Matsukura, Fumihiro [1 ,2 ,4 ]
Ohno, Hideo [1 ,2 ,3 ,4 ]
机构
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 9800845, Japan
[4] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
关键词
Magnetic tunnel junction (MTJ); multilayer; perpendicular magnetic anisotropy; spintronics;
D O I
10.1109/TMAG.2016.2517098
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate magnetic properties of CoFeB/Ta/[Co/Pd (Pt)] multilayers and properties of magnetic tunnel junctions (MTJs) with the structures as a recording layer. CoFeB/Ta/[Co/Pd] multilayer shows a lower damping constant a than that of CoFeB/Ta/[Co/Pt] multilayer. We evaluate current-induced magnetization switching (CIMS) properties of the MTJs with CoFeB/Ta/[Co/Pd (Pt)] multilayers with the junction diameter of 15 (13) nm that show similar thermal stability factor. CIMS is observed for the MTJ with a CoFeB/Ta/[Co/Pd] multilayer at zero magnetic field, whereas it is observed for the MTJ with the CoFeB/Ta/[Co/Pt] multilayer only in the presence of an external field.
引用
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页数:4
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