Effect of strain compensation on quantum dot enhanced GaAs solar cells

被引：346
作者：
Hubbard, S. M. [1 ]
Cress, C. D. [1 ]
Bailey, C. G. [1 ]
Raffaelle, R. P. [1 ]
Bailey, S. G. [2 ]
Wilt, D. M. [2 ]
机构：
[1] Rochester Inst Technol, Nanopower Res Lab, Dept Phys, Rochester, NY 14623 USA
[2] NASA, Glenn Res Ctr, Photovolta & Power Technol Branch, Cleveland, OH 44135 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期
基金：
美国国家航空航天局;
关键词：
D O I：
10.1063/1.2903699
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaP tensile strain compensation ( SC ) layers were introduced into GaAs solar cells enhanced with a five layer stack of InAs quantum dots (QDs ). One sun air mass zero illuminated current- voltage curves show that SC results in improved conversion efficiency and reduced dark current. The strain compensated QD solar cell shows a slight increase in short circuit current compared to a baseline GaAs cell due to sub- GaAs bandgap absorption by the InAs QD. Quantum efficiency and electroluminescence were also measured and provide further insight to the improvements due to SC. (C) 2008 American Institute of Physics.
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页数：3
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