Effect of strain compensation on quantum dot enhanced GaAs solar cells

被引：348

作者：

Hubbard, S. M. ^{[1
]}

Cress, C. D. ^{[1
]}

Bailey, C. G. ^{[1
]}

Raffaelle, R. P. ^{[1
]}

Bailey, S. G. ^{[2
]}

Wilt, D. M. ^{[2
]}

机构：

[1] Rochester Inst Technol, Nanopower Res Lab, Dept Phys, Rochester, NY 14623 USA

[2] NASA, Glenn Res Ctr, Photovolta & Power Technol Branch, Cleveland, OH 44135 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2903699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaP tensile strain compensation ( SC ) layers were introduced into GaAs solar cells enhanced with a five layer stack of InAs quantum dots (QDs ). One sun air mass zero illuminated current- voltage curves show that SC results in improved conversion efficiency and reduced dark current. The strain compensated QD solar cell shows a slight increase in short circuit current compared to a baseline GaAs cell due to sub- GaAs bandgap absorption by the InAs QD. Quantum efficiency and electroluminescence were also measured and provide further insight to the improvements due to SC. (C) 2008 American Institute of Physics.

引用

页数：3

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