Statistical Evaluation of Dynamic Junction Leakage Current Fluctuation Using a Simple Arrayed Capacitors Circuit

被引:8
作者
Abe, Kenichi [1 ]
Fujisawa, Takafumi [1 ]
Suzuki, Hiroyoshi [1 ]
Watabe, Shunichi [1 ]
Kuroda, Rihito [1 ]
Sugawa, Shigetoshi [1 ]
Teramoto, Akinobu [2 ]
Ohmi, Tadahiro [2 ]
机构
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 980, Japan
[2] Tohoku Univ, WPI Res Ctr, New Ind Creat Hatchery Ctr, Sendai, Miyagi 980, Japan
来源
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年
关键词
p-n junction leakage current; random telegraph signal (RTS); MOSFET; dynamic random access memory (DRAM); retention time; test circuit;
D O I
10.1109/IRPS.2010.5488751
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate statistical behaviors of steady-state p-n junction leakage currents at source/drain of MOSFET devices (I(leak)s) and dynamic fluctuations of IleakS using a newly developed test circuit. The test circuit can acquire the leakage currents from 28,672 n(+)-p diodes in 7.7 s with 10 times averaging with the range from 0.1 fA to 23 fA. We demonstrate that two normal distributions exist in the steady-state (time averaging) I-leak distributions, which have different temperature dependency. A distribution of the activation energy which extracted from temperature dependence of I-leak is also revealed. Dynamic fluctuation of I-leak can be measured precisely with a simple configuration to execute pseudo parallel sampling among numerous samples for a long time. It can clarify a positive correlation between mean values of Ileak (<I-leak>) and amplitudes of quantum fluctuation of I-leak (Delta I-leak).
引用
收藏
页码:683 / 688
页数:6
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