Statistical Evaluation of Dynamic Junction Leakage Current Fluctuation Using a Simple Arrayed Capacitors Circuit

被引：8

作者：

Abe, Kenichi ^{[1
]}

Fujisawa, Takafumi ^{[1
]}

Suzuki, Hiroyoshi ^{[1
]}

Watabe, Shunichi ^{[1
]}

Kuroda, Rihito ^{[1
]}

Sugawa, Shigetoshi ^{[1
]}

Teramoto, Akinobu ^{[2
]}

Ohmi, Tadahiro ^{[2
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 980, Japan

[2] Tohoku Univ, WPI Res Ctr, New Ind Creat Hatchery Ctr, Sendai, Miyagi 980, Japan

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

p-n junction leakage current; random telegraph signal (RTS); MOSFET; dynamic random access memory (DRAM); retention time; test circuit;

D O I：

10.1109/IRPS.2010.5488751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate statistical behaviors of steady-state p-n junction leakage currents at source/drain of MOSFET devices (I(leak)s) and dynamic fluctuations of IleakS using a newly developed test circuit. The test circuit can acquire the leakage currents from 28,672 n(+)-p diodes in 7.7 s with 10 times averaging with the range from 0.1 fA to 23 fA. We demonstrate that two normal distributions exist in the steady-state (time averaging) I-leak distributions, which have different temperature dependency. A distribution of the activation energy which extracted from temperature dependence of I-leak is also revealed. Dynamic fluctuation of I-leak can be measured precisely with a simple configuration to execute pseudo parallel sampling among numerous samples for a long time. It can clarify a positive correlation between mean values of Ileak (<I-leak>) and amplitudes of quantum fluctuation of I-leak (Delta I-leak).

引用

页码：683 / 688

页数：6

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