Ferroelectric and antiferromagnetic domain wall

被引：14
|
作者：
Hanamura, E
Tanabe, Y
机构：
[1] Chitose Inst Sci & Technol, Chitose, Hokkaido 0668655, Japan
[2] Japan Sci & Technol Corp, Chitose, Hokkaido 0668655, Japan
[3] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2003年 / 72卷 / 11期
关键词：
ferroelectronics; hexagonal YMnO3; domain wall; counpling of order-parameters; antiferromagnets; triangular lattice;
D O I：
10.1143/JPSJ.72.2959
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It has been experimentally confirmed that the ferroelectric (FEL) and anti ferro magnetic (AFM) order-parameter in hexagonal YMnO3 are coupled at the FEL domain boundary. A microscopic model for this clamping of the two order-parameters is proposed. The clamping can be understood as due to the change of exchange integrals induced by the spin-orbit interaction and low symmetry field within the FEL domain boundary and due to spin anisotropy energy which depends on the sign of FEL polarization.
引用
收藏
页码：2959 / 2966
页数：8
相关论文
共 50 条
  • [1] Interacting antiferromagnetic and ferroelectric domain structures of multiferroics
    Gareeva, Z. V.
    Zvezdin, A. K.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (2-3): : 79 - 81
  • [2] The ferromagnetic moment of an antiferromagnetic domain wall
    Papanicolaou, N
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (08) : L131 - L138
  • [3] Generalized Model of Antiferromagnetic Domain Wall
    Mitsumata, C.
    Sakuma, A.
    IEEE TRANSACTIONS ON MAGNETICS, 2011, 47 (10) : 3501 - 3504
  • [4] Ferromagnetic moment of an antiferromagnetic domain wall
    Papanicolaou, N.
    Journal of Physics Condensed Matter, 1998, 10 (08):
  • [5] Ferroelectric domain wall memory
    李一鸣
    孙杰
    江安全
    Chinese Physics B, 2023, 32 (12) : 28 - 34
  • [6] Ferroelectric Domain Wall Memristor
    McConville, James P. V.
    Lu, Haidong
    Wang, Bo
    Tan, Yueze
    Cochard, Charlotte
    Conroy, Michele
    Moore, Kalani
    Harvey, Alan
    Bangert, Ursel
    Chen, Long-Qing
    Gruverman, Alexei
    Gregg, J. Marty
    ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (28)
  • [7] Ferroelectric domain wall memory
    Li, Yiming
    Sun, Jie
    Jiang, Anquan
    CHINESE PHYSICS B, 2023, 32 (12)
  • [8] Ferroelectric Domain Wall Injection
    Whyte, Jonathan R.
    McQuaid, Raymond G. P.
    Sharma, Pankaj
    Canalias, Carlota
    Scott, James F.
    Gruverman, Alexei
    Gregg, J. Marty
    ADVANCED MATERIALS, 2014, 26 (02) : 293 - 298
  • [9] Discrete versus continuous antiferromagnetic domain wall
    Soboleva, TK
    Zhedanov, AS
    PHYSICS LETTERS A, 1996, 223 (06) : 470 - 474
  • [10] Antiferromagnetic domain wall memory with neuromorphic functionality
    J. Godinho
    P. K. Rout
    R. Salikhov
    O. Hellwig
    Z. Šobáň
    R. M. Otxoa
    K. Olejník
    T. Jungwirth
    J. Wunderlich
    npj Spintronics, 2 (1):
12345