Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

被引：0

作者：

Tsukamoto, Katsuhiro ^{[1
]}

Kuroi, Takashi ^{[2
]}

Kawasaki, Yoji ^{[2
]}

机构：

[1] Mitsubishi Electr Corp, Tokyo, Japan

[2] Renesas Elect Corp, Rennes, France

来源：

ION IMPLANTATION TECHNOLOGY 2010 | 2010年 / 1321卷

关键词：

Ion Implantation; Semiconductor Devices; Semiconductor Processing; FILM; NITROGEN; SURFACE; SI; STERILIZATION; DIAMOND; MOSFETS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Industrial aspects of the evolution of ion implantation technology will be reviewed, and their impact on the semiconductor industry will be discussed. The main topics will be the technology's application to the most advanced, ultra scaled CMOS, and to power devices, as well as productivity improvements in implantation technology. Technological insights into future developments in ion-related technologies for emerging industries will also be presented.

引用

页码：9 / +

页数：3

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