共 10 条
[1]
Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions
[J].
An, Yanbin
;
Behnam, Ashkan
;
Pop, Eric
;
Ural, Ant
.
APPLIED PHYSICS LETTERS,
2013, 102 (01)

An, Yanbin
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

Behnam, Ashkan
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Micro & Nanotechnol Lab, Dept Elect & Comp Engn, Urbana, IL 61801 USA Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

Pop, Eric
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Micro & Nanotechnol Lab, Dept Elect & Comp Engn, Urbana, IL 61801 USA
Univ Illinois, Beckman Inst, Urbana, IL 61801 USA Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

Ural, Ant
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
[2]
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
[J].
Britnell, L.
;
Gorbachev, R. V.
;
Jalil, R.
;
Belle, B. D.
;
Schedin, F.
;
Mishchenko, A.
;
Georgiou, T.
;
Katsnelson, M. I.
;
Eaves, L.
;
Morozov, S. V.
;
Peres, N. M. R.
;
Leist, J.
;
Geim, A. K.
;
Novoselov, K. S.
;
Ponomarenko, L. A.
.
SCIENCE,
2012, 335 (6071)
:947-950

Britnell, L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Gorbachev, R. V.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Jalil, R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Belle, B. D.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Schedin, F.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Mishchenko, A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Georgiou, T.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Katsnelson, M. I.
论文数: 0 引用数: 0
h-index: 0
机构:
Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Eaves, L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Morozov, S. V.
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Peres, N. M. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Minho, Dept Fis, P-4710057 Braga, Portugal
Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore
Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Leist, J.
论文数: 0 引用数: 0
h-index: 0
机构:
Moment Performance Mat, Strongsville, OH 44070 USA Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Geim, A. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Novoselov, K. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

Ponomarenko, L. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
[3]
Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum
[J].
Gao, Libo
;
Ren, Wencai
;
Xu, Huilong
;
Jin, Li
;
Wang, Zhenxing
;
Ma, Teng
;
Ma, Lai-Peng
;
Zhang, Zhiyong
;
Fu, Qiang
;
Peng, Lian-Mao
;
Bao, Xinhe
;
Cheng, Hui-Ming
.
NATURE COMMUNICATIONS,
2012, 3

Gao, Libo
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Ren, Wencai
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Xu, Huilong
论文数: 0 引用数: 0
h-index: 0
机构:
Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Jin, Li
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Wang, Zhenxing
论文数: 0 引用数: 0
h-index: 0
机构:
Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Ma, Teng
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Ma, Lai-Peng
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Zhang, Zhiyong
论文数: 0 引用数: 0
h-index: 0
机构:
Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Fu, Qiang
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Peng, Lian-Mao
论文数: 0 引用数: 0
h-index: 0
机构:
Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Bao, Xinhe
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

Cheng, Hui-Ming
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
[4]
Current saturation in zero-bandgap, topgated graphene field-effect transistors
[J].
Meric, Inanc
;
Han, Melinda Y.
;
Young, Andrea F.
;
Ozyilmaz, Barbaros
;
Kim, Philip
;
Shepard, Kenneth L.
.
NATURE NANOTECHNOLOGY,
2008, 3 (11)
:654-659

Meric, Inanc
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Elect Engn, New York, NY 10027 USA Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

Han, Melinda Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

Young, Andrea F.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

Ozyilmaz, Barbaros
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

Kim, Philip
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

Shepard, Kenneth L.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Elect Engn, New York, NY 10027 USA Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[5]
Giant intrinsic carrier mobilities in graphene and its bilayer
[J].
Morozov, S. V.
;
Novoselov, K. S.
;
Katsnelson, M. I.
;
Schedin, F.
;
Elias, D. C.
;
Jaszczak, J. A.
;
Geim, A. K.
.
PHYSICAL REVIEW LETTERS,
2008, 100 (01)

Morozov, S. V.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Novoselov, K. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Katsnelson, M. I.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nijmegen, Inst Mol & Mat, NL-6525 ED Nijmegen, Netherlands Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Schedin, F.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Elias, D. C.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Jaszczak, J. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Michigan Technol Univ, Dept Phys, Houghton, MI 49931 USA Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Geim, A. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
[6]
Schwierz F, 2010, NAT NANOTECHNOL, V5, P487, DOI [10.1038/NNANO.2010.89, 10.1038/nnano.2010.89]
[7]
Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction
[J].
Tomer, D.
;
Rajput, S.
;
Hudy, L. J.
;
Li, C. H.
;
Li, L.
.
APPLIED PHYSICS LETTERS,
2014, 105 (02)

Tomer, D.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA

Rajput, S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA

Hudy, L. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA

Li, C. H.
论文数: 0 引用数: 0
h-index: 0
机构:
Naval Res Lab, Washington, DC 20375 USA Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA

Li, L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA
[8]
Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
[J].
Tongay, S.
;
Lemaitre, M.
;
Miao, X.
;
Gila, B.
;
Appleton, B. R.
;
Hebard, A. F.
.
PHYSICAL REVIEW X,
2012, 2 (01)
:1-10

Tongay, S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Florida, Dept Phys, Gainesville, FL 32611 USA
Univ Florida, Nanosci Inst Med & Engn Technol, Gainesville, FL 32611 USA Univ Florida, Dept Phys, Gainesville, FL 32611 USA

Lemaitre, M.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Florida, Dept Phys, Gainesville, FL 32611 USA

Miao, X.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Florida, Dept Phys, Gainesville, FL 32611 USA Univ Florida, Dept Phys, Gainesville, FL 32611 USA

Gila, B.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Florida, Nanosci Inst Med & Engn Technol, Gainesville, FL 32611 USA Univ Florida, Dept Phys, Gainesville, FL 32611 USA

Appleton, B. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Florida, Nanosci Inst Med & Engn Technol, Gainesville, FL 32611 USA Univ Florida, Dept Phys, Gainesville, FL 32611 USA

Hebard, A. F.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Florida, Dept Phys, Gainesville, FL 32611 USA Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[9]
Half integer quantum Hall effect in high mobility single layer epitaxial graphene
[J].
Wu, Xiaosong
;
Hu, Yike
;
Ruan, Ming
;
Madiomanana, Nerasoa K.
;
Hankinson, John
;
Sprinkle, Mike
;
Berger, Claire
;
de Heer, Walt A.
.
APPLIED PHYSICS LETTERS,
2009, 95 (22)

Wu, Xiaosong
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Hu, Yike
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Ruan, Ming
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Madiomanana, Nerasoa K.
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Hankinson, John
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Sprinkle, Mike
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Berger, Claire
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
CNRS, Inst Neel, F-38042 Grenoble 9, France Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

de Heer, Walt A.
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[10]
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
[J].
Yang, Heejun
;
Heo, Jinseong
;
Park, Seongjun
;
Song, Hyun Jae
;
Seo, David H.
;
Byun, Kyung-Eun
;
Kim, Philip
;
Yoo, InKyeong
;
Chung, Hyun-Jong
;
Kim, Kinam
.
SCIENCE,
2012, 336 (6085)
:1140-1143

Yang, Heejun
论文数: 0 引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea

论文数: 引用数:
h-index:
机构:

Park, Seongjun
论文数: 0 引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea

Song, Hyun Jae
论文数: 0 引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea

Seo, David H.
论文数: 0 引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea

Byun, Kyung-Eun
论文数: 0 引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea

Kim, Philip
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea

Yoo, InKyeong
论文数: 0 引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea

论文数: 引用数:
h-index:
机构:

Kim, Kinam
论文数: 0 引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Yongin 446712, South Korea Samsung Adv Inst Technol, Graphene Res Ctr, Yongin 446712, South Korea