Atomic structure and electronic properties of the GaN/ZnO(0001) interface

被引：32
|
作者：
Von Pezold, J [1 ]
Bristowe, PD [1 ]
机构：
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
来源：
JOURNAL OF MATERIALS SCIENCE | 2005年 / 40卷 / 12期
关键词：
D O I：
10.1007/s10853-005-2664-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The stability and electronic structure of cation- and anion-compensated interfaces between (0001) lattice-matched slabs of GaN and ZnO have been considered. It was found that, irrespective of interfacial polarity, cation-compensated interfaces are by approximately 20 meV/unit cell more stable than the corresponding anion-compensated interfaces. Valence band offsets of 1.0 and 0.5 eV have been found at the cation- and anion-compensated interfaces, respectively.
引用
收藏
页码：3051 / 3057
页数：7
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