Energy-dependent Huang-Rhys factor of free excitons

被引：90

作者：

Zhao, H ^{[1
]}

Kalt, H ^{[1
]}

机构：

[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.68.125309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use quantum wells of the polar semiconductor ZnSe as a model system to demonstrate an energy dependence of the excitonic Huang-Rhys factor. Both the spectral shape of phonon-sideband emission and the intensity ratios of hot-exciton luminescence peaks yield identical results. We find that the Huang-Rhys factor decreases rapidly from 0.31 for cold excitons to less than 0.10 for hot excitons with a kinetic energy of about 15 meV, which is consistent with theoretical predictions. This behavior of the Huang-Rhys factor is confirmed to be independent of experimental conditions such as sample temperature and excitation wavelength. Previous (energetically integrating) experiments yielding such dependencies can be interpreted in terms of the influence of the exciton distribution.

引用

页数：5

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