Energy-dependent Huang-Rhys factor of free excitons

被引：92

作者：

Zhao, H ^{[1
]}

Kalt, H ^{[1
]}

机构：

[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.68.125309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use quantum wells of the polar semiconductor ZnSe as a model system to demonstrate an energy dependence of the excitonic Huang-Rhys factor. Both the spectral shape of phonon-sideband emission and the intensity ratios of hot-exciton luminescence peaks yield identical results. We find that the Huang-Rhys factor decreases rapidly from 0.31 for cold excitons to less than 0.10 for hot excitons with a kinetic energy of about 15 meV, which is consistent with theoretical predictions. This behavior of the Huang-Rhys factor is confirmed to be independent of experimental conditions such as sample temperature and excitation wavelength. Previous (energetically integrating) experiments yielding such dependencies can be interpreted in terms of the influence of the exciton distribution.

引用

页数：5

共 39 条

[1] Exciton-LO-phonon interaction of CuCl spherical quantum dots studied by resonant hyper-Raman spectroscopy [J].

Baranov, AV ;

Yamauchi, S ;

Matsumoto, Y .

PHYSICAL REVIEW B, 1997, 56 (16) :10332-10337

[2] PARTICLE LOCALIZATION AND PHONON SIDE-BAND IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS [J].

BRENER, I ;

OLSZAKIER, M ;

COHEN, E ;

EHRENFREUND, E ;

RON, A ;

PFEIFFER, L .

PHYSICAL REVIEW B, 1992, 46 (12) :7927-7930

[3] Spectroscopic analysis and persistent photon-gated spectral hole burning in LiF:F2- color center crystal [J].

Fedorov, VV ;

Mirov, SB ;

Ashenafi, M ;

Xie, L .

APPLIED PHYSICS LETTERS, 2001, 79 (15) :2318-2320

[4] Effects of electron-phonon interaction and chemical shift on near-band-edge recombination in GaN [J].

Germain, M ;

Kartheuser, E ;

Gurskii, AL ;

Lutsenko, EV ;

Marko, IP ;

Pavlovskii, VN ;

Yablonskii, GP ;

Heime, K ;

Heuken, M ;

Schineller, B .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) :9827-9834

[5] Resonant Raman scattering in self-organized InAs/GaAs quantum dots [J].

Heitz, R ;

Born, H ;

Hoffmann, A ;

Bimberg, D ;

Mukhametzhanov, I ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3746-3748

[6] Existence of a phonon bottleneck for excitons in quantum dots [J].

Heitz, R ;

Born, H ;

Guffarth, F ;

Stier, O ;

Schliwa, A ;

Hoffmann, A ;

Bimberg, D .

PHYSICAL REVIEW B, 2001, 64 (24)

[7] Electron-phonon coupling in a delta-doped n-i-p structure in GaAs [J].

Henning, JCM ;

deGroote, FPJ ;

vanderVleuten, WC ;

Wolter, JH .

PHYSICAL REVIEW B, 1996, 53 (23) :15802-15809

[8]

HUANG K, 1955, P ROY SOC LOND A MAT, V204, P406

[9] Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes [J].

Kalliakos, S ;

Zhang, XB ;

Taliercio, T ;

Lefebvre, P ;

Gil, B ;

Grandjean, N ;

Damilano, B ;

Massies, J .

APPLIED PHYSICS LETTERS, 2002, 80 (03) :428-430

[10] Free exciton emission in GaN [J].

Kovalev, D ;

Averboukh, B ;

Volm, D ;

Meyer, BK ;

Amano, H ;

Akasaki, I .

PHYSICAL REVIEW B, 1996, 54 (04) :2518-2522

← 1 2 3 4 →