Investigation of Time-Dependent VTH Instability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT

被引：2

作者：

Chen, Junting ^{[1
]}

Wang, Chengcai ^{[1
]}

Jiang, Jiali ^{[1
]}

Hua, Mengyuan ^{[1
]}

机构：

[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China

来源：

2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA) | 2020年

关键词：

p-GaN; HEMT; reverse-bias stress; threshold voltage instability; THRESHOLD VOLTAGE INSTABILITY; PERFORMANCE; MECHANISMS; SHIFT; METAL;

D O I：

10.1109/IPEMC-ECCEAsia48364.2020.9367779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article proposes a model for threshold voltage (V-TH) instability induced by reverse-bias stress (i.e. drain-to-source voltage at off-state) in Schottky gate p-GaN high electron mobility transistors (HEMTs). It is suggested that two different mechanisms would take place during the reverse-bias stress. At the beginning of the stress, a sudden V-TH shift is observed, which is recognized to be dominated by hole-deficiency in the further experiments. While the gradually-increased V-TH shift during the long-term stress could be mainly induced by electron trapping in both barrier and buffer layers.

引用

页码：142 / 145

页数：4

共 30 条

[1] The 2018 GaN power electronics roadmap [J].

Amano, H. ;

Baines, Y. ;

Beam, E. ;

Borga, Matteo ;

Bouchet, T. ;

Chalker, Paul R. ;

Charles, M. ;

Chen, Kevin J. ;

Chowdhury, Nadim ;

Chu, Rongming ;

De Santi, Carlo ;

De Souza, Maria Merlyne ;

Decoutere, Stefaan ;

Di Cioccio, L. ;

Eckardt, Bernd ;

Egawa, Takashi ;

Fay, P. ;

Freedsman, Joseph J. ;

Guido, L. ;

Haeberlen, Oliver ;

Haynes, Geoff ;

Heckel, Thomas ;

Hemakumara, Dilini ;

Houston, Peter ;

Hu, Jie ;

Hua, Mengyuan ;

Huang, Qingyun ;

Huang, Alex ;

Jiang, Sheng ;

Kawai, H. ;

Kinzer, Dan ;

Kuball, Martin ;

Kumar, Ashwani ;

Lee, Kean Boon ;

Li, Xu ;

Marcon, Denis ;

Maerz, Martin ;

McCarthy, R. ;

Meneghesso, Gaudenzio ;

Meneghini, Matteo ;

Morvan, E. ;

Nakajima, A. ;

Narayanan, E. M. S. ;

Oliver, Stephen ;

Palacios, Tomas ;

Piedra, Daniel ;

Plissonnier, M. ;

Reddy, R. ;

Sun, Min ;

Thayne, Iain .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (16)

[2]

Bakeroot B, 2019, PROC INT SYMP POWER, P419, DOI [10.1109/ispsd.2019.8757629, 10.1109/ISPSD.2019.8757629]

[3]

Bandic ZZ, 1998, APPL PHYS LETT, V73, P3276, DOI 10.1063/1.122743

[4] High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment [J].

Cai, Y ;

Zhou, YG ;

Chen, KJ ;

Lau, KM .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) :435-437

[5] GaN-on-Si Power Technology: Devices and Applications [J].

Chen, Kevin J. ;

Haeberlen, Oliver ;

Lidow, Alex ;

Tsai, Chun Lin ;

Ueda, Tetsuzo ;

Uemoto, Yasuhiro ;

Wu, Yifeng .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) :779-795

[6] Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology [J].

Chen, Kevin J. ;

Zhou, Chunhua .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (02) :434-438

[7] Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs [J].

Efthymiou, Loizos ;

Murukesan, Karthick ;

Longobardi, Giorgia ;

Udrea, Florin ;

Shibib, Ayman ;

Terrill, Kyle .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (08) :1253-1256

[8] Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface [J].

Hashizume, T .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :431-436

[9] Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p-GaN Gate HEMTs [J].

He, Jiabei ;

Wei, Jin ;

Yang, Song ;

Wang, Yuru ;

Zhong, Kailun ;

Chen, Kevin J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (08) :3453-3458

[10] VTH Instability of p-GaN Gate HEMTs Under Static and Dynamic Gate Stress [J].

He, Jiabei ;

Tang, Gaofei ;

Chen, Kevin J. .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (10) :1576-1579

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