Structural and Optical Properties of InAlN/GaN Distributed Bragg Reflectors

被引：4

作者：

Usov, S. O. ^{[1
,2
]}

Zavarin, E. E. ^{[1
,2
]}

Tsatsul'nikov, A. F. ^{[1
,2
]}

Lundin, V. V. ^{[1
,2
]}

Sakharov, A. V. ^{[1
,2
]}

Nikolaev, A. E. ^{[1
,2
]}

Sinitsyn, M. A. ^{[1
,3
]}

Kryzhanovskaya, N. V. ^{[1
]}

Troshkov, S. I. ^{[1
]}

Ledentsov, N. N. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Submicron Heterostruct Microelect Res & Engn Ctr, St Petersburg 194021, Russia

[3] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

PERIODIC STRATIFIED MEDIA; ELECTROMAGNETIC PROPAGATION;

D O I：

10.1134/S1063782610070201

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Structural and optical properties of InAlN/GaN distributed Bragg reflectors grown by MOCVD on sapphire substrates are studied. The influence of growth conditions and thicknesses of the InAlN layers on structural properties of distributed Bragg reflectors is studied. It is shown that optimization of the conditions of epitaxial growth makes it possible to design InAlN/GaN distributed Bragg reflectors with a reflectance of more than 99% and a reflection maximum in the wavelength range of 460-610 nm.

引用

页码：949 / 953

页数：5

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