Molecular Memory Switching Device Based on a Tetranuclear Organotin Sulfide Cage [(RSnIV)4(μ-S)6]•2CHCl3•4H2O (R = 2-(Phenylazo)phenyl): Synthesis, Structure, DFT Studies, and Memristive Behavior

被引:22
作者
Mishra, Abhishek [1 ]
Betal, Atanu [1 ]
Pal, Neelam [1 ]
Kumar, Ravi [2 ]
Lama, Prem [3 ]
Sahu, Satyajit [1 ]
Metre, Ramesh K. [1 ]
机构
[1] Indian Inst Technol Jodhpur, Jodhpur, Rajasthan, India
[2] Indian Inst Technol, Bombay, Maharashtra, India
[3] CSIR Indian Inst Petr, Dehra Dun, Uttar Pradesh, India
关键词
organotin sulfide; molecular memory device; MIM sandwich structure; TDDFT; single-crystal X-ray crystallography; NONVOLATILE RESISTIVE MEMORY; MAGNETIC-PROPERTIES; COMPLEX; CRYSTAL; DESIGN;
D O I
10.1021/acsaelm.9b00703
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
RSnCl3 (R = 2-phenylazophenyl) on reaction with Na2S center dot 9H(2)O in a 1:1 mixture of acetone and methanol afforded a tetranuclear monoorganotin sulfide cage [(RSnIV)(4)(mu-S)(6)]center dot 2CHCl(3)center dot 4H(2)O (R = 2-phenylazophenyl) (1). Complex 1 crystallizes in the monoclinic space group P2/n. The molecular structure of 1 contains five -coordinate tin centers in distorted trigonal bipyramidal geometry. Complex 1 is monoorganotin sulfide derivative having a tetranuclear double-decker cage-like structure. In 1, four tin centers are bridged by a mu(2)-S unit affording a ubiquitous Sn-S-Sn motif among monoorganotin sulfide compounds. In addition, each tin also has intramolecular coordination to a nitrogen atom of a 2-phenylazophenyl substituent (N -> Sn). The DFT calculation suggests that the complex 1 involves mainly ligand based transitions. The complex 1 based device was studied for its electrical behavior and was found to show stable, reproducible memristive behavior with an on-off ratio of 10(3), which suggests that the complex 1 is a promising material for memory device applications.
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页码:220 / 229
页数:19
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