The Growth and Properties of Relaxor-Based Ferroelectric Single Crystals

被引:79
作者
Li, Xiaobing [1 ]
Luo, Haosu [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 201800, Peoples R China
关键词
MORPHOTROPIC PHASE-BOUNDARY; FIELD-INDUCED STRAIN; LINEAR ELECTROOPTIC PROPERTIES; FREE PIEZOELECTRIC-CRYSTALS; MODIFIED BRIDGMAN TECHNIQUE; ELECTRICAL-PROPERTIES; PB(MG1/3NB2/3)O-3-PBTIO3 CRYSTALS; ORIENTATION DEPENDENCE; PEROVSKITES PB(SC1/2NB1/2)O3; POLARIZATION ROTATION;
D O I
10.1111/j.1551-2916.2010.04107.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Much attention is drawn to the fundamental research and the applications of the relaxor-based ferroelectrics for the next generation of piezoelectric devices. Mass production of Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) (PMNT) and ternary xPb(In1/2Nb1/2)O-3-yPb(Mg1/3Nb2/3)O-3-zPbTiO(3) (PIMNT) single crystals with a Bridgman method was reported. The piezoelectric, pyroelectric, and electric-optical performances of PMNT single crystals are much more excellent than traditional ceramics with the composition near morphotropic phase boundaries. Compared with PMNT crystal, PIMNT crystals can be used in a more broad range of device applications due to their high Curie temperature T-c and large coercive fields E-c. A relaxor-based Na0.5Bi0.5TiO3-xBaTiO(3) (NBBT) crystal grown by the top seeded solution growth method was also investigated to find a lead-free material with better piezoelectric performance. The properties of these relaxor-based single crystals were summarized. The mechanism of the enhanced piezoelectric response is discussed, based on the phase transitions induced by the variations of the temperature, pressure, composition, and electric field.
引用
收藏
页码:2915 / 2928
页数:14
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