From two-dimensional materials to heterostructures

被引:121
|
作者
Niu, Tianchao [1 ]
Li, Ang [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
关键词
Graphene; Boron nitride; Metal dichalcogenide; Vertical stacking; Heterostructures; Chemical vapor deposition; HEXAGONAL BORON-NITRIDE; CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; SINGLE-LAYER GRAPHENE; MOS2 ATOMIC LAYERS; LARGE-AREA; DIRAC FERMIONS; HIGH-QUALITY; INTERFACE SUPERCONDUCTIVITY; VERTICAL HETEROSTRUCTURES;
D O I
10.1016/j.progsurf.2014.11.001
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Graphene, hexagonal boron nitride, molybdenum disulphide, and layered transition metal dichalcogenides (TMDCs) represent a class of two-dimensional (20) atomic crystals with unique properties due to reduced dimensionality. Stacking these materials on top of each other in a controlled fashion can create heterostructures with tailored properties that offers another promising approach to design and fabricate novel electronic devices. In this report, we attempt to review this rapidly developing field of hybrid materials. We summarize the fabrication methods for different 2D materials, the layer-by-layer growth of various vertical heterostructures and their electronic properties. Particular interests are given to in-situ stack aforementioned 2D materials in controlled sequences, and the TMDCs heterostructures. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:21 / 45
页数:25
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