Effect of substrates on the properties of p-type ZnO films

被引:7
|
作者
Zhang, X. D. [1 ]
Fan, H. B.
Sun, J.
Zhao, Y.
机构
[1] Nankai Univ, Inst Photo Elect Thin Film Devices & Tech, Tianjin 300071, Peoples R China
[2] Hebei Univ Technol, Coll Informat Engn, Tianjin 300130, Peoples R China
来源
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 39卷 / 02期
基金
中国国家自然科学基金;
关键词
p-type; co-doping; ultrasonic spray pyrolysis;
D O I
10.1016/j.physe.2007.06.035
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Influence of substrates on the properties of p-type ZnO films, which were fabricated by N-Al co-doping technique, was studied. Hall measurement results indicated that ZnO films deposited on common glass substrate were p-type conductivity when Zn:N:Al atomic ratio amounts to 1:3:0.1. However, ZnO films deposited on corning 7059 glass substrate showed n-type conductivity. Secondary ion mass spectroscopy demonstrated that Na content incorporated into ZnO films deposited on common glass substrate was more evident than that of corning 7059 glass. In addition, Hall mobility and conductivity of p-type ZnO thin films deposited on silicon substrate were improved largely. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码:267 / 270
页数:4
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