High-work-function Ir/HfLaO p-MOSFETs using low-temperature-processed shallow junction

被引：3

作者：

Cheng, C. F. ^{[1
]}

Wu, C. H. ^{[2
]}

Su, N. C. ^{[2
]}

Wang, S. J. ^{[2
]}

McAlister, Sean P. ^{[3
]}

Chin, Albert ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 30010, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 30010, Taiwan

[3] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 03期

关键词：

HflLaO; solid phase diffusion; ultrashallow junction;

D O I：

10.1109/TED.2007.915060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a high effective work function (phi(m-eff)) and a very low V-t Ir gate on HfLaO p-MOSFETs using novel self-aligned low-temperature shallow junctions. This gate-first process has shallow junctions of 9.6 or 20 nm that are formed by solid phase diffusion using SiO2-covered Ga or Ni/Ga. At 1.2-nm effective oxide thickness, good phi(m-eff) of 5.3 eV, low V-t of +0.05 V, high mobility of 90 cm(2/)V.s at -0.3 MV/cm, and small 85 degrees C negative bias-temperature instability (NBTI) of 20 mV (10 MV/cm for 1 h) are measured for Ir/HfLaO p-MOSFETs.

引用

页码：838 / 843

页数：6

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