Piezoelectric and dielectric properties of Cr-doped PSN-PZN-PZT quaternary piezoelectric ceramics

PSN-PZN-PZT + x wt. %Cr2O3, X = 0.0-0-9, were prepared by conventional mixed oxide techniques at sintering temperatures of 1220 degrees C-1300 degrees C for 2 h. The effect of sintering temperature on the microstructure and the piezoelectric properties was investigated by XRD, SEM, and other conventional measurement. The result indicated that with temperature increasing, the valence of Cr ion from Cr5+ or Cr6+ changes into C3+, and the piezoelectric properties turn hard. With increasing Cr2O3 content, the amount of rhombohedral phases increases and the morphotropic boundary phase is correspondingly shifts to rhombohedral phase. A uniform microstructure and excellent comprehensive properties were obtained at 1240 degrees C as the amount of Cr2O3 is 0.5 wt.%.