Ferromagnetism and Nonmetallic Transport of Thin-Film α-FeSi2: A Stabilized Metastable Material

被引：22

作者：

Cao, Guixin ^{[1
]}

Singh, D. J. ^{[2
]}

Zhang, X. -G. ^{[1
]}

Samolyuk, German ^{[2
]}

Qiao, Liang ^{[1
]}

Parish, Chad ^{[2
]}

Jin, Ke ^{[3
]}

Zhang, Yanwen ^{[2
,3
]}

Guo, Hangwen ^{[2
]}

Tang, Siwei ^{[1
,3
]}

Wang, Wenbin ^{[2
]}

Yi, Jieyu ^{[1
,3
]}

Cantoni, Claudia ^{[2
]}

Siemons, Wolter ^{[2
]}

Payzant, E. Andrew ^{[1
]}

Biegalski, Michael ^{[1
]}

Ward, T. Z. ^{[2
]}

Mandrus, David ^{[2
,3
]}

Stocks, G. M. ^{[2
]}

Gai, Zheng ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[3] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

来源：

PHYSICAL REVIEW LETTERS | 2015年 / 114卷 / 14期

关键词：

ELECTRONIC-STRUCTURE; BAND-STRUCTURE; PSEUDOPOTENTIAL METHOD; EPITAXIAL-GROWTH; BETA-FESI2; DISILICIDES; DENSITY; FESI2; STATE; APPROXIMATION;

D O I：

10.1103/PhysRevLett.114.147202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A metastable phase alpha-FeSi2 was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on alpha-FeSi2 (111) thin films, while the bulk material of alpha-FeSi2 is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of alpha-FeSi2 obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

引用

页数：6

共 38 条

[1]

Blaha P., 2001, CALCULATING CRYST PR, V60

[2] EPITAXIAL-GROWTH OF ALPHA-FESI2 ON SI(111) AT LOW-TEMPERATURE [J].

CHEVRIER, J ;

STOCKER, P ;

VINH, L ;

GAY, JM ;

DERRIEN, J .

EUROPHYSICS LETTERS, 1993, 22 (06) :449-454

[3] ELECTRONIC-STRUCTURE OF BETA-FESI2 [J].

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1990, 42 (11) :7148-7153

[4] ELECTRON-MICROSCOPE STUDY OF ELECTRICALLY ACTIVE IMPURITY PRECIPITATE DEFECTS IN SILICON [J].

CULLIS, AG ;

KATZ, LE .

PHILOSOPHICAL MAGAZINE, 1974, 30 (06) :1419-1443

[5] Texture of tetragonal α-FeSi2 films on Si(001) -: art. no. 174106 [J].

Detavernier, C ;

Lavoie, C ;

Jordan-Sweet, J ;

Ozcan, AS .

PHYSICAL REVIEW B, 2004, 69 (17) :174106-1

[6] BONDING STATE OF SILICON SEGREGATED TO ALPHA-IRON SURFACES AND ON IRON SILICIDE SURFACES STUDIED BY ELECTRON-SPECTROSCOPY [J].

EGERT, B ;

PANZNER, G .

PHYSICAL REVIEW B, 1984, 29 (04) :2091-2101

[7] ELECTRONIC-STRUCTURE OF BURIED ALPHA-FESI2 AND BETA-FESI2 LAYERS - SOFT-X-RAY EMISSION AND ABSORPTION STUDIES COMPARED TO BAND-STRUCTURE CALCULATIONS [J].

EISEBITT, S ;

RUBENSSON, JE ;

NICODEMUS, M ;

BOSKE, T ;

BLUGEL, S ;

EBERHARDT, W ;

RADERMACHER, K ;

MANTL, S ;

BIHLMAYER, G .

PHYSICAL REVIEW B, 1994, 50 (24) :18330-18340

[8] CALCULATING PROPERTIES WITH THE COHERENT-POTENTIAL APPROXIMATION [J].

FAULKNER, JS ;

STOCKS, GM .

PHYSICAL REVIEW B, 1980, 21 (08) :3222-3244

[9] BAND-STRUCTURE AND ELECTRONIC-PROPERTIES OF FESI AND ALPHA-FESI(2) [J].

GIRLANDA, R ;

PIPARO, E ;

BALZAROTTI, A .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) :2837-2840

[10] Room-temperature ferroelectricity in strained SrTiO3 [J].

Haeni, JH ;

Irvin, P ;

Chang, W ;

Uecker, R ;

Reiche, P ;

Li, YL ;

Choudhury, S ;

Tian, W ;

Hawley, ME ;

Craigo, B ;

Tagantsev, AK ;

Pan, XQ ;

Streiffer, SK ;

Chen, LQ ;

Kirchoefer, SW ;

Levy, J ;

Schlom, DG .

NATURE, 2004, 430 (7001) :758-761

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