Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

被引：74
作者：
Britton, RS
Grevatt, T
Malinowski, A
Harley, RT
Perozzo, P
Cameron, AR
Miller, A
机构：
[1] Univ Southampton, Dept Phys, Southampton SO17 1BJ, Hants, England
[2] Univ St Andrews, Dept Phys, St Andrews, Fife, Scotland
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 15期
关键词：
D O I：
10.1063/1.122403
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].
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页码：2140 / 2142
页数：3
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