400 μm Diameter APD OEIC in 0.35 μm BiCMOS

被引：24

作者：

Jukic, Tomislav ^{[1
]}

Steindl, Bernhard ^{[1
]}

Zimmermann, Horst ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Electrodynam Microwave & Circuit Engn, A-1040 Vienna, Austria

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2016年 / 28卷 / 18期

关键词：

Avalanche photodiode; optical receiver; optical wireless communication; optoelectronic integrated circuit; transimpedance amplifier; bipolar complementary metal oxide semiconductor; AVALANCHE PHOTODIODE; TECHNOLOGY; RECEIVER;

D O I：

10.1109/LPT.2016.2578979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optoelectronic integrated circuit (OEIC) with a 400 mu m diameter avalanche photodiode (APD) is present. The OEIC is designed for use in systems of optical wireless communication and communication over plastic optical fiber. The used APD reaches a quantum efficiency of 81.7% without an anti-reflection coating. In combination with the 0.35 mu m bipolar complementary metal-oxide-semiconductor circuit, a data rate of 2 Gb/s can be reached with a sensitivity of -30.6 dBm (bit error rate 10(-9)) at a wavelength of 675 nm. The OEIC occupies an area of 960 mu m x 1540 mu m and is supplied with 3.3 V with a current consumption of 74 mA.

引用

页码：2004 / 2007

页数：4

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