Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se2 Thin Film

被引：1

作者：

Belfore, Benjamin ^{[1
]}

Poudel, Deewakar ^{[1
]}

Ashrafee, Tasnuva ^{[1
]}

Palmiotti, Elizabeth ^{[2
]}

Lepetit, Thomas ^{[3
]}

Karki, Shankar ^{[1
]}

Rajan, Grace ^{[1
]}

Rockett, Angus ^{[2
]}

Marsillac, Sylvain ^{[1
]}

机构：

[1] Old Dominion Univ, Virginia Inst Photovolta, Norfolk, VA 23529 USA

[2] Colorado Sch Mines, Dept Met & Mat Engn, Golden, CO 80401 USA

[3] Univ Nantes, Inst Mat Jean Rouxel, Nantes, France

来源：

2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2021年

关键词：

CIGS; recrystallization; CuCl2; thin film; TIME SPECTROSCOPIC ELLIPSOMETRY; BUFFER LAYER; BETA-IN2S3; DEPOSITION; DEVICES; GROWTH; IN2S3; CIGS;

D O I：

10.1109/PVSC43889.2021.9518617

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage co-evaporation process on molybdenum coated glass substrate. A vapor treatment was done in between the second and third stage by flashing CuCl2 for 5 mins at 400 degrees C. A large change in morphology and crystal structure was observed after the treatment. XRD and SEM showed that small grains transformed into large grains. A smoother Ga profile was observed by SIMS measurements for the treated films as compared to as-deposited films. Furthermore, the Na profile was also modified in the recrystallized samples, with a lower content after recrystallization.

引用

页码：2316 / 2319

页数：4

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