Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes

被引：32

作者：

Hao, Guo-Dong ^{[1
]}

Tamari, Naoki ^{[1
,2
]}

Obata, Toshiyuki ^{[2
]}

Kinoshita, Toru ^{[2
]}

Inoue, Shin-Ichiro ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol NICT, Adv ICT Res Inst, Kobe, Hyogo 6512492, Japan

[2] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 16期

基金：

日本科学技术振兴机构;

关键词：

DISLOCATIONS; EMISSION; NITRIDE;

D O I：

10.1364/OE.25.00A639

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We propose a method to determine the current injection efficiency (CIE) and internal quantum efficiency (IQE) of light-emitting diodes (LEDs) during current injection. The method is based on fourth-order polynomial fitting of a modified rate equation to electroluminescence data. Our method can extract the CIE at low injection current densities, unlike conventional methods that generally assume the CIE to be unity. We apply the method to AlGaN-based deep-ultraviolet LEDs. Results show that the CIE was only approximately 51% at low injection current densities and was almost independent of injection current density up to 100 A/cm(2). The peak IQE was 77%. (C) 2017 Optical Society of America

引用

页码：A639 / A648

页数：10

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