Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes

被引：35

作者：

Hao, Guo-Dong ^{[1
]}

Tamari, Naoki ^{[1
,2
]}

Obata, Toshiyuki ^{[2
]}

Kinoshita, Toru ^{[2
]}

Inoue, Shin-Ichiro ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol NICT, Adv ICT Res Inst, Kobe, Hyogo 6512492, Japan

[2] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 16期

基金：

日本科学技术振兴机构;

关键词：

DISLOCATIONS; EMISSION; NITRIDE;

D O I：

10.1364/OE.25.00A639

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We propose a method to determine the current injection efficiency (CIE) and internal quantum efficiency (IQE) of light-emitting diodes (LEDs) during current injection. The method is based on fourth-order polynomial fitting of a modified rate equation to electroluminescence data. Our method can extract the CIE at low injection current densities, unlike conventional methods that generally assume the CIE to be unity. We apply the method to AlGaN-based deep-ultraviolet LEDs. Results show that the CIE was only approximately 51% at low injection current densities and was almost independent of injection current density up to 100 A/cm(2). The peak IQE was 77%. (C) 2017 Optical Society of America

引用

页码：A639 / A648

页数：10

共 39 条

[1] Impact of high-temperature metalorganic vapor phase epitaxial growth of AlGaN-based UV-A, UV-B and UV-C quantum wells on the improvement of their internal quantum efficiency [J].

Amano, H. .

17TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS 2011, 2011, 326

[2] Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells [J].

Ban, Kazuhito ;

Yamamoto, Jun-ichi ;

Takeda, Kenichiro ;

Ide, Kimiyasu ;

Iwaya, Motoaki ;

Takeuchi, Tetsuya ;

Kamiyama, Satoshi ;

Akasaki, Isamu ;

Amano, Hiroshi .

APPLIED PHYSICS EXPRESS, 2011, 4 (05)

[3] Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region [J].

Banal, Ryan G. ;

Funato, Mitsuru ;

Kawakami, Yoichi .

APPLIED PHYSICS LETTERS, 2011, 99 (01)

[4]

Bhattacharya P., 1996, Semiconductor Optoelectronic Devices

[5]

Boer K. W., 1992, SURVEY SEMICONDUCTOR, P1180

[6] High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates [J].

Bryan, Zachary ;

Bryan, Isaac ;

Xie, Jinqiao ;

Mita, Seiji ;

Sitar, Zlatko ;

Collazo, Ramon .

APPLIED PHYSICS LETTERS, 2015, 106 (14)

[7]

Coldren L. A., 1995, DIODE LASERS PHOTONI, P49

[8] Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis [J].

David, Aurelien ;

Grundmann, Michael J. .

APPLIED PHYSICS LETTERS, 2010, 96 (10)

[9] The rate of radiative recombination in the nitride semiconductors and alloys [J].

Dmitriev, A ;

Oruzheinikov, A .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) :3241-3246

[10] 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power [J].

Grandusky, James R. ;

Chen, Jianfeng ;

Gibb, Shawn R. ;

Mendrick, Mark C. ;

Moe, Craig G. ;

Rodak, Lee ;

Garrett, Gregory A. ;

Wraback, Michael ;

Schowalter, Leo J. .

APPLIED PHYSICS EXPRESS, 2013, 6 (03)

← 1 2 3 4 →