Formation and evolution of epitaxial Co5Ge7 on Ge(001) surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope -: art. no. 071904

被引：22

作者：

Sun, HP

Chen, YB

Pan, XQ ^{[1
]}

Chi, DZ

Nath, R

Foo, YL

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1862331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cobalt was deposited on single-crystal Ge(001) surface at similar to 350 C by electron-beam evaporation in an ultrahigh-vacuum transmission electron microscope. The deposited Co reacts with Ge to form nanosized islands with the cobalt germanide Co5Ge7 phase. The Co5Ge7 islands show square and rectangular shapes. Two epitaxial orientation relationships between Co5Ge7 and Ge were observed: Co5Ge7 drop110drop(001) \\ Gedrop100drop(001) and Co5Ge7drop001drop(110)\\ Gedrop100drop(001). (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 12 条

[1] PHASE-TRANSITIONS DURING SOLID-STATE FORMATION OF COBALT GERMANIDE BY RAPID THERMAL ANNEALING [J].