In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy

被引：7

作者：

Yu, J. L. ^{[1
]}

Chen, Y. H. ^{[1
]}

Ye, X. L. ^{[1
]}

Jiang, C. Y. ^{[1
]}

Jia, C. H. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 01期

基金：

中国国家自然科学基金;

关键词：

MOLECULAR-BEAM EPITAXY; STRAIN RELAXATION; GROWTH TEMPERATURE; INTERFACE; ALLOYS; GAAS; HETEROSTRUCTURES; MICROSTRUCTURE; GANXAS1-X; NITROGEN;

D O I：

10.1063/1.3457901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface properties of GaN(x)As(1-x)/GaAs single-quantum well is investigated at 80 K by reflectance difference spectroscopy. Strong in-plane optical anisotropies (IPOA) are observed. Numerical calculations based on a 4 band K . P Hamiltonian are performed to analyze the origin of the optical anisotropy. It is found that the IPOA can be mainly attributed to anisotropic strain effect, which increases with the concentration of nitrogen. The origin of the strain component epsilon(xy) is also discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457901]

引用

页数：5

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