Control of impurity diffusion by IR excitations

被引：1

作者：

Shirai, K. ^{[1
]}

Yamaguchi, H. ^{[1
]}

Katayama-Yoshida, H. ^{[1
]}

机构：

[1] Osaka Univ, ISIR, Nanosci & Nanotechnol Ctr, Osaka, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷

关键词：

theory; group IV; IR excitation; diffusion; vibration;

D O I：

10.1016/j.physb.2007.09.051

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

IR laser excitation has potential to use for a method of selective diffusion of impurities in the Si device processes. To illustrate the effectiveness of this method, first-principles molecular dynamics simulation has been applied. Effectiveness of IR excitation is for the first time shown for those impurities which have a local mode. The laser power required for this method is estimated. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：682 / 685

页数：4

共 13 条

[1] 1-PHONON BAND-MODE ABSORPTION BY IMPURITY RESONANCES IN DIAMOND AND SILICON
ANGRESS, JF
GOODWIN, AR
SMITH, SD
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1968, 308 (1492): : 111 - &
[2] Real-space, real-time method for the dielectric function
Bertsch, GF
Iwata, JI
Rubio, A
Yabana, K
[J]. PHYSICAL REVIEW B, 2000, 62 (12): : 7998 - 8002
[3] Superconductivity in doped cubic silicon
Bustarret, E.
Marcenat, C.
Achatz, P.
Kacmarcik, J.
Levy, F.
Huxley, A.
Ortega, L.
Bourgeois, E.
Blase, X.
Debarre, D.
Boulmer, J.
[J]. NATURE, 2006, 444 (7118) : 465 - 468
[4] POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON
FAHEY, PM
GRIFFIN, PB
PLUMMER, JD
[J]. REVIEWS OF MODERN PHYSICS, 1989, 61 (02) : 289 - 384
[5] KAKIMOTO K, 2004, P 4 INT S ADV SCI TE
[6] A UNIFIED FORMULATION OF THE CONSTANT TEMPERATURE MOLECULAR-DYNAMICS METHODS
NOSE, S
[J]. JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (01) : 511 - 519
[7] Control of impurity diffusion in silicon by IR laser excitation
Shirai, K.
Yamaguchi, H.
Katayama-Yoshida, H.
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (36)
[8] Vibration problem of H in silicon
Shirai, K
Hamada, I
Katayama-Yoshida, H
[J]. PHYSICA B-CONDENSED MATTER, 2006, 376 : 41 - 44
[9] SHIRAI K, 2004, P 4 INT S ADV SCI TE, P129
[10] Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium -: art. no. 185503
Sun, B
Yang, Q
Newman, RC
Pajot, B
Tolk, NH
Feldman, LC
Lüpke, G
[J]. PHYSICAL REVIEW LETTERS, 2004, 92 (18) : 185503 - 1

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