Modelling, analysis, and experimental study of SiC JFET body diode

被引：1
作者：
Ben Salah, T. [1 ,2 ,3 ]
Lahbib, Y. [3 ]
Morel, H. [2 ]
机构：
[1] Univ Tunis El Manar, ENIT LSE, Tunis De Belvedere 1002, Tunisia
[2] Univ Lyon, Lab Ampere, INSA Lyon, Lyon, France
[3] Univ 7 November Carthage, ESTI, Tunis, Tunisia
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2011年 / 53卷 / 01期
关键词：
I-N-DIODES; PIN DIODE; POWER; EXTRACTION; DEVICES;
D O I：
10.1051/epjap/2010100172
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Within Silicon Carbide Junction Field Effect Transistor (SiC-JFET) model, body diode is not extensively studied and almost under-researched. Body diode remains a complex device to study particularly during switching transients. In this paper, the JFET body diode is experimentally demonstrated to be a power. PiN diode. Finite element method model based on the device geometry and SiC material is used to accurately simulate this diode. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for design parameters of the SiC-JFET body diode. A comparative study between experimental data and simulation results is given to validate the device model and associate parameters.
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页数：6
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