The effect of antisite defects on the band structure and dielectric function of In1-xGaxSb solid solutions

被引：4

作者：

Deibuk, VG ^{[1
]}

Studenets, VI ^{[1
]}

机构：

[1] Chernovtsy State Univ, UA-274012 Chernovtsy, Ukraine

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 09期

关键词：

D O I：

10.1134/1.1187519

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A nonlocal empirical pseudopotential scheme that includes the spin-orbit interaction is used to calculate the electronic structure of In1-xGaxSb solid solutions. A modified virtual-crystal approximation is used to explain the nonlinear experimental dependence of the width of the band gap on composition. The computed band structure is then used to calculate the dispersion of the dielectric constant and compare it with experimental results. (C) 1998 American Institute of Physics. [1063-7826(98)00709-1].

引用

页码：944 / 946

页数：3

共 8 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[2] PIEZOREFLECTANCE MEASUREMENTS ON GAXIN1-XSB ALLOYS [J].

AUVERGNE, D ;

CAMASSEL, J ;

MATHIEU, H ;

JOULLIE, A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (02) :133-140

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[4]

Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3

[5]

Dmitriev AP, 1996, SEMICONDUCTORS+, V30, P60

[6] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR 2 ISOELECTRONIC SERIES - GE-GAAS-ZNSE AND ALPHA-SN-INSB-CDTE [J].

HUMPHREYS, TP ;

SRIVASTAVA, GP .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 112 (02) :581-597

[7] OPTICAL-CONSTANTS OF IN1-CHI-GA-CHI-SB TERNARY ALLOYS - EXPERIMENT AND MODELING [J].

IMAI, S ;

ADACHI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A) :3860-3865

[8] TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION AND THE INTERBAND CRITICAL-POINT PARAMETERS OF GASB [J].

ZOLLNER, S ;

GARRIGA, M ;

HUMLICEK, J ;

GOPALAN, S ;

CARDONA, M .

PHYSICAL REVIEW B, 1991, 43 (05) :4349-4360

← 1 →