Low-Power Digital Gates in ERSFQ and nSQUID Technology

被引:3
作者
Lucci, Massimiliano [1 ]
Ren, Jie [2 ]
Sarwana, Saad [2 ]
Ottaviani, Ivano [1 ]
Cirillo, Matteo [1 ,3 ]
Badoni, Davide [4 ]
Salina, Gaetano [4 ]
机构
[1] Univ Roma Tor Vergata, Dept Phys, Micro & Nanostruct Syst Lab, I-00133 Rome, Italy
[2] Hypres Inc, 175 Clearbrook Rd, Elmsford, NY 10523 USA
[3] INnovat Syst Consiglio Nazl Ric Inst, SuPerconductors, I-84084 Fisciano, Italy
[4] Ist Nazl Fis Nucl, I-00185 Rome, Italy
关键词
Digital gates; energy-efficient rapid single flux quantum (ERSFQ); low power; niobium; nSQUID; superconductor; T flip-flop; CIRCUITS;
D O I
10.1109/TASC.2016.2535146
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We designed and tested low-power digital gates based on the energy-efficient rapid single flux quantum (ERSFQ) and on the reversible nSQUID logic. The ERSFQ circuit consists of a series of 13 toggle flip-flops (TFFs), where the bias resistors are replaced by inductors which generate no energy dissipation in the static mode, resulting in a power consumption orders of magnitude below that of traditional RSFQ circuits during operation. The ERSFQ circuits were fabricated with HYPRES' standard 4.5-kA/cm(2) process and tested up to 20 GHz. The RF input level was about -25 dBm 50 Omega matched, and the output level was 400 mu Vpp. The nSQUID ring with "NOT" gates was fabricated with HYPRES' standard 1-kA/cm(2) process. The "0" and "1" input logic signals were realized injecting +/- 5 mA of current in a superconductive coil, obtaining 6 mu Vpp of amplitude as output signal. The test was performed at low frequency in order to verify the functionality and the ultralow power consumption.
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页数:5
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