Multiferroic BiFeO3 Thin Films for Multifunctional Devices

被引：7
作者：
Singh, Manish K. [1 ]
Yang, Yi [1 ]
Takoudis, Christos G. [1 ,2 ]
Tatarenko, A. [3 ]
Srinivasan, G. [3 ]
Kharel, P. [4 ]
Lawes, G. [4 ]
机构：
[1] Univ Illinois, Dept Chem Engn, Chicago, IL 60607 USA
[2] Univ Illinois, Dept Bioengn, Chicago, IL 60607 USA
[3] Oakland Univ, Dept Phys, Rochester, MI 48309 USA
[4] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2010年 / 10卷 / 09期
关键词：
Multiferroic; Chemical Vapor Deposition; Bismuth Iron Oxide; Metallorganic Precursor; Electrostatic Force Microscopy; Ferroelectric; Antiferromagnetic; CHEMICAL-VAPOR-DEPOSITION; MOCVD; PRECURSORS;
D O I：
10.1166/jnn.2010.2598
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report the metalorganic chemical vapor deposition of crystalline BiFeO3 films on platinized silicon substrates using n-butylferrocene, triphenylbismuth and oxygen. Based on thermogravimetric analysis data, the suitability of these two precursors for depositing BiFeO3 is discussed. The deposited films were characterized for structure and morphology using X-ray diffraction and scanning electron microscopy. Composition analysis using X-ray photoelectron spectroscopy revealed that the films were stoichiometric BiFeO3. Electrostatic force microscopy indicated that the film had polarizable domains that showed no deterioration in polarization over time long after electric poling. The film showed a saturation magnetization of 10 +/- 1 emu/cm(3) at room temperature.
引用
收藏
页码：6195 / 6199
页数：5
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