Low temperature platinum chemical vapor deposition on functionalized self-assembled monolayers

被引:3
|
作者
Salazar, Bryan G. [1 ]
Liu, Hanwen [2 ]
Walker, Amy, V [1 ,3 ]
McElwee-White, Lisa [2 ]
机构
[1] Univ Texas Dallas, Dept Chem & Biochem, 800 W Campbell Rd, Richardson, TX 75080 USA
[2] Univ Florida, Dept Chem, Gainesville, FL 32611 USA
[3] Univ Texas Dallas, Dept Mat Sci & Engn, 800 W Campbell Rd, Richardson, TX 75080 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2020年 / 38卷 / 03期
基金
美国国家科学基金会;
关键词
ATOMIC LAYER DEPOSITION; SURFACE; CVD; PRECURSORS; COMPLEXES; GROWTH; METALS;
D O I
10.1116/6.0000087
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The reaction pathways of Pt CVD using (COD)PtMe2 - xClx (x = 0, 1, 2) have been investigated on functionalized self-assembled monolayers (SAMs) as models for organic substrates. Residual gas analysis for (COD)PtMe2 and (COD)PtMeCl is consistent with the loss of methyl radicals as the initial step in deposition, while for (COD)PtCl2, the first step is the loss of a chlorine radical. It is further shown using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry that the deposition process leads to chemical damage of the SAM layer and little Pt deposition. Using this understanding, it is demonstrated that the Pt CVD rate can be controlled using a radical trap. In the presence of 1,4-cyclohexadiene, a well-known alkyl radical trap, Pt deposition was increased by 5x to 10x, creating a room-temperature effective Pt CVD process.
引用
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页数:13
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