Multifunctional dual-tunable low loss ferrite-ferroelctric heterostructures for microwave devices

被引：40
作者：
Das, Jaydip [1 ]
Kalinikos, Boris A.
Barman, Arkajit Roy
Patton, Carl E.
机构：
[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA
[2] St Petersburg Electrotech Univ, St Petersburg 197376, Russia
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 17期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1063/1.2802577
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Oriented barium ferrite (BaM) and polycrystalline ferroelectric barium strontium titanate (BSTO) layered structures have been fabricated by pulsed laser deposition. The 0.5 mu m thick BaM layer has a saturation induction of 4 kG, a uniaxial effective anisotropy field of 16 kOe, and a relatively low ferromagnetic resonance linewidth of about 25 Oe, values that are indicative of a high quality film. The dielectric constant of the 0.9 mu m thick BSTO layer drops by a factor of 2 for an applied voltage of 3 V. (C) 2007 American Institute of Physics.
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