Activation of high-Tc ferromagnetism in Mn2+-doped ZnO using amines

被引:167
作者
Kittilstved, KR [1 ]
Gamelin, DR [1 ]
机构
[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA
关键词
D O I
10.1021/ja050723o
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the discovery that high-TC ferromagnetism in manganese-doped ZnO (Mn2+:ZnO) can be activated by amine binding and calcination. The activation of ferromagnetism is attributed to the incorporation of uncompensated p-type dopants into the ZnO lattice upon amine calcination, a process that has substantial precedence in the literature surrounding p-type ZnO. The experimental observations are consistent with a microscopic mechanism involving formation of bound magnetic polarons upon introduction of p-type dopants into Mn2+:ZnO. These results clearly demonstrate that Mn2+:ZnO ferromagnetism is critically sensitive to defects other than the magnetic dopants themselves, offering some insight into the diversity of experimental observations reported previously for this material. Copyright © 2005 American Chemical Society.
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页码:5292 / 5293
页数:2
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共 23 条
  • [1] INTERACTION BETWEEN BAND ELECTRONS AND TRANSITION-METAL IONS IN DILUTED MAGNETIC SEMICONDUCTORS
    BHATTACHARJEE, AK
    [J]. PHYSICAL REVIEW B, 1992, 46 (09): : 5266 - 5273
  • [2] Doped Semiconductor Nanocrystals: Synthesis, Characterization, Physical Properties, and Applications
    Bryan, J. Daniel
    Gamelin, Daniel R.
    [J]. PROGRESS IN INORGANIC CHEMISTRY, VOL 54, 2005, 54 : 47 - 126
  • [3] Donor impurity band exchange in dilute ferromagnetic oxides
    Coey, JMD
    Venkatesan, M
    Fitzgerald, CB
    [J]. NATURE MATERIALS, 2005, 4 (02) : 173 - 179
  • [4] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
    Dietl, T
    Ohno, H
    Matsukura, F
    Cibert, J
    Ferrand, D
    [J]. SCIENCE, 2000, 287 (5455) : 1019 - 1022
  • [5] Dilute magnetic semiconductors - Functional ferromagnets
    Dietl, T
    [J]. NATURE MATERIALS, 2003, 2 (10) : 646 - 648
  • [6] Magnetization steps in Zn1-xMnxO:: Four largest exchange constants and single-ion anisotropy -: art. no. 125209
    Gratens, X
    Bindilatti, V
    Oliveira, NF
    Shapira, Y
    Foner, S
    Golacki, Z
    Haas, TE
    [J]. PHYSICAL REVIEW B, 2004, 69 (12)
  • [7] Magnetism in Mn-doped ZnO bulk samples prepared by solid state reaction
    Han, SJ
    Jang, TH
    Kim, YB
    Park, BG
    Park, JH
    Jeong, YH
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (05) : 920 - 922
  • [8] Effects of high-dose Mn implantation into ZnO grown on sapphire
    Heo, YW
    Ivill, MP
    Ip, K
    Norton, DP
    Pearton, SJ
    Kelly, JG
    Rairigh, R
    Hebard, AF
    Steiner, T
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (13) : 2292 - 2294
  • [9] On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn-Zn-O system
    Kundaliya, DC
    Ogale, SB
    Lofland, SE
    Dhar, S
    Metting, CJ
    Shinde, SR
    Ma, Z
    Varughese, B
    Ramanujachary, KV
    Salamanca-Riba, L
    Venkatesan, T
    [J]. NATURE MATERIALS, 2004, 3 (10) : 709 - 714
  • [10] Hole-mediated ferromagnetic properties in Zn1-xMnxO thin films
    Lim, SW
    Jeong, MC
    Ham, MH
    Myoung, JM
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (2B): : L280 - L283