Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy

被引：138

作者：

Ohno, H ^{[1
]}

Akiba, N ^{[1
]}

Matsukura, F ^{[1
]}

Shen, A ^{[1
]}

Ohtani, K ^{[1
]}

Ohno, Y ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 03期

关键词：

D O I：

10.1063/1.121835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage characteristics of AlAs/GaAs/AlAs double barrier resonant tunneling diodes with ferromagnetic p-type (Ga, Mn)As on one side and p-type GaAs on the other have been studied. A series of resonant peaks have been observed in both polarities, i.e., injecting holes from p-type GaAs and from (Ga, Mn)As. When holes are injected from the (Cia, Mn)As side, spontaneous resonant peak splitting has been observed below the ferromagnetic transition temperature of (Ga, Mn)As without magnetic field. The temperature dependence of the splitting is explained by the the spontaneous spin splitting in the valence band of ferromagnetic (Ga, Mn)As. (C) 1998 American Institute of Physics.

引用

页码：363 / 365

页数：3

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