Integrated results for dual low voltage IC based high and low side gate drive

被引：0

作者：

Yin, Y ^{[1
]}

Zane, R ^{[1
]}

机构：

[1] Univ Colorado, Dept Elect & Comp Engn, CoPEC, Boulder, CO 80309 USA

来源：

APEC 2005: TWENTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3 | 2005年

关键词：

high side; gate drive; floating drive; capacitive coupling; charge pump; integrated circuit; electronic ballast;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An IC design for high and low side gate drive is presented based on use of two identical low voltage ICs that provide a low cost alternative to existing high voltage IC drivers. The approach uses a single external coupling capacitor between the two ICs with on-chip circuitry to provide charge pump power supply and on/off signaling. Design details are given for each of the core blocks of a custom IC prototype fabricated in a 15 V, 0.8 mu m CMOS process. Experimental results are presented demonstrating successful drive of a 200 V half-bridge with an LCC electronic ballast and 32 W linear fluorescent lamp (LFL) load.

引用

页码：759 / 765

页数：7

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