Polishing behaviors of single crystalline ceria abrasives on silicon dioxide and silicon nitride CMP

被引：25

作者：

Oh, Myoung-Hwan ^{[1
]}

Singh, Rajiv K. ^{[1
]}

Gupta, Sushant ^{[1
]}

Cho, Seung-Beom ^{[2
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] LG Chem Ltd Res Pk, I&E Mat, Taejon 305380, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 12期

关键词：

Ceria; Abrasive; Chemical mechanical polishing (CMP); Removal selectivity; CHEMICAL-MECHANICAL PLANARIZATION; SHALLOW TRENCH ISOLATION; PARTICLE-SIZE; STI-CMP; FILMS; REMOVAL; POWDERS; SLURRY;

D O I：

10.1016/j.mee.2010.07.040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of single crystalline ceria (CeO(2)) abrasives in chemical mechanical polishing (CMP) slurries were investigated for silicon dioxide (SiO(2)) and silicon nitride (Si(3)N(4)) CMP process. The size of ceria abrasives was controlled by varying hydrothermal reaction conditions. Polishing removal rate was measured with four slurries, with different mean primary particle size of 62, 116, 163 and 232 nm. The polishing results showed that the single crystalline ceria abrasives were not easily broken-down by mechanical force during CMP process. It was found that the removal rate of oxide and nitride film strongly depend upon abrasive size, whereas the surface uniformity deteriorates as abrasive size increases. The observed polishing results confirmed that there exists an optimum abrasive size (163 nm) for maximum removal selectivity between oxide and nitride films. The polishing behavior of the single crystalline ceria abrasives was discussed in terms of morphological properties of the abrasive particle. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2633 / 2637

页数：5

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