Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects

被引：0

作者：

Zhou, Y ^{[1
]}

Scherban, T ^{[1
]}

Xu, GH ^{[1
]}

He, J ^{[1
]}

Miner, B ^{[1
]}

Jan, CH ^{[1
]}

Ott, A ^{[1
]}

O'Loughlin, J ^{[1
]}

Ingerly, D ^{[1
]}

Leu, J ^{[1
]}

机构：

[1] Intel Corp, Log Technol Dev, Technol Dev Qual & Reliabil, Hillsboro, OR 97124 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004) | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of etch-stop (ES)/Cu interfacial chemistry on adhesion and electromigration (EM) has been systematically investigated by varying Cu surface chemistry, etch-stop film chemistry, metal capping layers, and thermal annealing conditions. Adhesion and EM improvement directly correlate with reducing interfacial oxygen for all the systems studied. While the adhesion of freshly deposited ES films strongly depends on the Cu surface chemistry and ES deposition conditions, the hermeticity of the ES film significantly impacts the film and interface chemistry during subsequent processing and thermal cycles, consequently affecting the long term stability of adhesion and electromigration performance. The mechanism for the correlation and material properties governing the interfacial chemistry will be discussed.

引用

页码：189 / 199

页数：11

共 50 条

[41] Analytical modeling of reservoir effect on electromigration in Cu interconnects
Gan Z.
Gusak A.M.
Shao W.
Chen Z.
Mhaisalkar S.G.
Zaporozhets T.
Tu K.N.
Journal of Materials Research, 2007, 22 (1) : 152 - 156
[42] Electromigration in two level interconnects of Cu and Al alloys
Materials Chemistry and Physics, 1995, 41 (01):
[43] Microscopic investigation of electromigration failure in narrow Cu interconnects
Michael, NL
Kim, CU
Jiang, QT
Augur, R
ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001), 2001, : 497 - 502
[44] Electromigration of interconnects of a TiN/Cu/TiN/Ti structure
Braud, F
Tartavel, G
Palleau, J
Torres, J
Persico, A
Reimbold, G
QUALITY AND RELIABILITY ENGINEERING INTERNATIONAL, 1996, 12 (04) : 305 - 308
[45] Scaling Effects on Microstructure and Electromigration Reliability for Cu and Cu(Mn) Interconnects
Cao, Linjun
Zhang, Lijuan
Ho, Paul S.
Justison, Patrick
Hauschildt, Meike
2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
[46] CHANGEABLE ELECTROMIGRATION FAILURE MODE IN WIDE CU INTERCONNECTS
Zheng, Hui
Yin, Binfeng
Chen, Leigang
Zhou, Ke
Kuo, Chinte
2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2018,
[47] Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps
Hu, CK
Gignac, L
Liniger, E
Herbst, B
Rath, DL
Chen, ST
Kaldor, S
Simon, A
Tseng, WT
APPLIED PHYSICS LETTERS, 2003, 83 (05) : 869 - 871
[48] Correlation of electromigration defects in small damascene Cu interconnects with their microstructure
Wendrock, H
Mirpuri, K
Menzel, S
Schindler, G
Wetzig, K
MICROELECTRONIC ENGINEERING, 2005, 82 (3-4) : 660 - 664
[49] Electromigration reliability of 60 nm dual damascene Cu interconnects
Pyun, J. W.
Baek, W. -C.
Denning, D.
Knorr, A.
Smith, L.
Pfeifer, K.
Ho, P. S.
PROCEEDINGS OF THE IEEE 2006 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2006, : 107 - +
[50] Electromigration of Cu interconnects under AC and DC test conditions
Shaviv, Roey
Harm, Gregory J.
Kumari, Sangita
Keller, Robert R.
Read, David T.
MICROELECTRONIC ENGINEERING, 2012, 92 : 111 - 114

← 1 2 3 4 5 →